2SC4747 - Даташиты. Аналоги. Основные параметры

2SC4747 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature High breakdown voltage VCBO = 1500 V High speed switching tf 0.3 s Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4747 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter volta

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4747 DESCRIPTION With TO-3PFM package High speed switching High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4747 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 )

2SC4745 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output Feature TO-3PFM High speed switching tf = 0.2 s typ High breakdown voltage VCBO = 1500 V Isolated package; TO-3PFM Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit 1 2 3 1. Base 2. Collector Collector to b

2SC4742 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature High breakdown voltage VCES = 1500 V Built-in damper diode type Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1 3 2 3 2SC4742 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 1500 V Emitter to

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4742 DESCRIPTION With TO-3PN package Built-in damper diode High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum rati

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4744 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4745 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4746 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4743 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4742 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CES Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25