2SC4747 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4747
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3PFM
2SC4747 Transistor Equivalent Substitute - Cross-Reference Search
2SC4747 Datasheet (PDF)
2sc4747.pdf
2SC4747Silicon NPN Triple DiffusedApplicationCharacter display horizontal deflection outputFeature High breakdown voltageVCBO = 1500 V High speed switchingtf 0.3 sOutlineTO-3PFM1. Base 2. Collector 3. Emitter1232SC4747Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 1500 VCollector to emitter volta
2sc4747.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4747 DESCRIPTION With TO-3PFM package High speed switching High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER
2sc4747.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4747DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)
2sc4745.pdf
2SC4745Silicon NPN Triple DiffusedCharacter Display Horizontal Deflection OutputFeatureTO-3PFM High speed switchingtf = 0.2 s typ High breakdown voltageVCBO = 1500 V Isolated package; TO-3PFMAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit1231. Base2. CollectorCollector to b
2sc4742.pdf
2SC4742Silicon NPN Triple DiffusedApplicationCharacter display horizontal deflection outputFeature High breakdown voltageVCES = 1500 V Built-in damper diode typeOutlineTO-3P211. Base ID2. Collector (Flange) 3. Emitter13232SC4742Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltage VCES 1500 VEmitter to
2sc4742.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4742 DESCRIPTION With TO-3PN package Built-in damper diode High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum rati
2sc4744.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4744DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE
2sc4745.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4745DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)
2sc4746.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4746DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)
2sc4743.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4743DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)
2sc4742.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4742DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CESBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
