DATA SHEETNPN SILICON EPITAXIAL TRANSISTOR2SC4783NPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DRAWING (Unit: mm) The 2SC4783 is NPN silicon epitaxial transistor.0.3 0.05 0.1+0.10.05FEATURES High DC current gain: hFE2 = 200 TYP. High voltage: VCEO = 50 V30 to 0.1ABSOLUTE MAXIMUM RATINGS (TA = 25C)2 1Collector to Base Voltage VCBO 60 V0.2+0.1

Transistor2SC4787Silicon NPN epitaxial planer typeFor intermediate frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)

Transistor2SC4787Silicon NPN epitaxial planer typeFor intermediate frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)

Transistor2SC4782Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15High-speed switching.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Max

Transistor2SC4782Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15High-speed switching.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Max

2SC4789Silicon NPN Triple DiffusedApplication TO3PLCharacter Display Horizontal Deflection OutputFeatures High speed switching time: 0.5 s max High breakdown voltage, high current:VCBO = 1500 V, IC = 25 A Suitable for large size CRT Display1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

2SC4784Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz Typ. High gain, low noise figurePG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineCMPAK311. Emitter2. Base23. Collector2SC4784Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VColle

SMD Type TransistorsNPN Transistors2SC4782SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Coll

isc Product Specificationisc Silicon NPN Power Transistor 2SC4789DESCRIPTIONSilicon NPN triple diffusedHigh Switching SpeedHigh Breakdown VoltageHigh speed switching time100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deffection outputSuitable for large size CRT