2SC478 Datasheet. Specs and Replacement
Type Designator: 2SC478 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.12 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO18
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2SC478 Substitution
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2SC478 datasheet
DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC4783 is NPN silicon epitaxial transistor. 0.3 0.05 0.1+0.1 0.05 FEATURES High DC current gain hFE2 = 200 TYP. High voltage VCEO = 50 V 3 0 to 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 2 1 Collector to Base Voltage VCBO 60 V 0.2+0.1 ... See More ⇒
Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) ... See More ⇒
Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) ... See More ⇒
Detailed specifications: 2SC4760, 2SC4761, 2SC4762, 2SC4763, 2SC4764, 2SC4765, 2SC4766, 2SC477, TIP35C, 2SC4781, 2SC4789, 2SC479, 2SC4793, 2SC4796, 2SC4797, 2SC479H, 2SC48
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