2SD617 - описание и поиск аналогов

 ..1. Size:182K  inchange semiconductor
 2sd617.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD617 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.1. Size:238K  sanyo
 2sd612.pdf 

 9.2. Size:303K  sanyo
 2sd612k.pdf 

 9.3. Size:40K  sanyo
 2sd613.pdf 

Ordering number 513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions High breakdown voltage, VCEO85V, high current 6A. unit mm AF25 to 35W output. 2010C [2SB633/2SD613] JEDEC TO-220AB 1 Base ( ) 2SB633 EIAJ SC-46 2 Collector 3 Emitter Specifications Absolute Maximum Ratings at Ta =

 9.4. Size:27K  sanyo
 2sb633p 2sd613p.pdf 

Ordering number ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, unit mm high current 6A. 2010C AF 35 to 45W output. [2SB633P / 2SD613P] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 2 Collector 1 2 3 3 Emitter Spec

 9.5. Size:214K  inchange semiconductor
 2sd612.pdf 

isc Silicon NPN Power Transistor 2SD612 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 25V(Min.) (BR)CEO High Collector Dissipation Wide Area of Safe Operation Complement to Type 2SB632 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

 9.6. Size:201K  inchange semiconductor
 2sd612 2sd612k.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION With TO-126 package Complement to type 2SB632/632K High collector dissipation Wide area of safe operation APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Bas

 9.7. Size:213K  inchange semiconductor
 2sd613.pdf 

isc Silicon NPN Power Transistor 2SD613 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 85V(Min) (BR)CEO Complement to Type 2SB633 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency 25 35 watts output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100