Биполярный транзистор 2SD617 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD617
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 2500
Корпус транзистора: TO3
2SD617 Datasheet (PDF)
2sd617.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD617DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
2sd612k.pdf
Ordering number:341GPNP/NPN Epitaxial Planar Silicon Transistor2SB632, 632K/2SD612, 612K25V/35V, 2A Low-FrequencyPower Amplifier ApplicationsFeatures Package Dimensions High collector dissipation and wide ASO.unit:mm2009B[2SB632, 632K/2SD612, 612K]1 : Emitter2 : Collector3 : Base( ) : 2SB632, 632KJEDEC : TO-126SpecificationsAbsolute Maximum Ratings at Ta = 25
2sd613.pdf
Ordering number:513HPNP/NPN Epitaxial Planar Silicon Transistor2SB633/2SD61385V/6A, AF 25 to 35W Output ApplicationsFeatures Package Dimensions High breakdown voltage, VCEO85V, high current 6A.unit:mm AF25 to 35W output.2010C[2SB633/2SD613]JEDEC : TO-220AB 1 : Base( ) : 2SB633EIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta =
2sb633p 2sd613p.pdf
Ordering number : ENN66622SB633P/2SD613PPNP / NPN Epitaxial Planar Silicon Transistors2SB633P / 2SD613P85V / 6A, AF 35 to 45W Output ApplicationsFeaturesPackage Dimensions High breakdown voltage, VCEO 85V,unit : mmhigh current 6A.2010C AF 35 to 45W output.[2SB633P / 2SD613P]10.24.53.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSpec
2sd612.pdf
isc Silicon NPN Power Transistor 2SD612DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 25V(Min.)(BR)CEOHigh Collector DissipationWide Area of Safe OperationComplement to Type 2SB632Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T
2sd612 2sd612k.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION With TO-126 package Complement to type 2SB632/632K High collector dissipation Wide area of safe operation APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Bas
2sd613.pdf
isc Silicon NPN Power Transistor 2SD613DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 85V(Min)(BR)CEOComplement to Type 2SB633Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency 25~35 watts output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050