2SD617 Datasheet and Replacement

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD617DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Ordering number:341GPNP/NPN Epitaxial Planar Silicon Transistor2SB632, 632K/2SD612, 612K25V/35V, 2A Low-FrequencyPower Amplifier ApplicationsFeatures Package Dimensions High collector dissipation and wide ASO.unit:mm2009B[2SB632, 632K/2SD612, 612K]1 : Emitter2 : Collector3 : Base( ) : 2SB632, 632KJEDEC : TO-126SpecificationsAbsolute Maximum Ratings at Ta = 25

Ordering number:513HPNP/NPN Epitaxial Planar Silicon Transistor2SB633/2SD61385V/6A, AF 25 to 35W Output ApplicationsFeatures Package Dimensions High breakdown voltage, VCEO85V, high current 6A.unit:mm AF25 to 35W output.2010C[2SB633/2SD613]JEDEC : TO-220AB 1 : Base( ) : 2SB633EIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta =

Ordering number : ENN66622SB633P/2SD613PPNP / NPN Epitaxial Planar Silicon Transistors2SB633P / 2SD613P85V / 6A, AF 35 to 45W Output ApplicationsFeaturesPackage Dimensions High breakdown voltage, VCEO 85V,unit : mmhigh current 6A.2010C AF 35 to 45W output.[2SB633P / 2SD613P]10.24.53.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSpec

isc Silicon NPN Power Transistor 2SD612DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 25V(Min.)(BR)CEOHigh Collector DissipationWide Area of Safe OperationComplement to Type 2SB632Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION With TO-126 package Complement to type 2SB632/632K High collector dissipation Wide area of safe operation APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Bas

isc Silicon NPN Power Transistor 2SD613DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 85V(Min)(BR)CEOComplement to Type 2SB633Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency 25~35 watts output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100