Биполярный транзистор 3N100 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 3N100
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Корпус транзистора: TO72
3N100 Datasheet (PDF)
mtb3n100erev2x.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB3N100E/DDesigner's Data SheetMTB3N100ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 3.0 AMPERES1000 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 4.0 OHMthan any existing surface
mtp3n100e.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N100E/DDesigner's Data SheetMTP3N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination3.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde
mtb3n100e.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB3N100E/DDesigner's Data SheetMTB3N100ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 3.0 AMPERES1000 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 4.0 OHMthan any existing surface
mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf
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mtp3n100e-.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N100E/DDesigner's Data SheetMTP3N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination3.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde
stp3n100.pdf
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STP3N100STP3N100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP3N100 1000 V
ixta3n100d2hv.pdf
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Preliminary Technical InformationHigh Voltage VDSX = 1000VIXTA3N100D2HVDepletion Mode ID(on) > 3AMOSFET RDS(on) 6 DN-ChannelGTO-263HVSGSD (Tab)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1000 VG = Gate D = DrainVGSX Continuous 20 VS = Source Tab = DrainVGSM Transient 30 VPD TC = 25C 1
ixta3n100p ixth3n100p ixtp3n100p.pdf
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IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)
aot3n100.pdf
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AOT3N100/AOTF3N1001000V,2.8A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT3N100 & AOTF3N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
aotf3n100.pdf
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AOT3N100/AOTF3N1001000V,2.8A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT3N100 & AOTF3N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
t03n100gp.pdf
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CHENMKO ENTERPRISE CO.,LTDT03N100GPSURFACE MOUNT NPN Silicon Transistor VOLTAGE 100Volts CURRENT 3 AmpereAPPLICATION* General purpose applications.* Other switching applications.TO-220FEATURE* Package. (TO-220)* DC Current Gain Specified to Ic=3A( ).187 4.7( ).148 3.8( ).153 3.9* High Current Gain-Bandwidth Product : fT=3MHz (Min.) .413 10.5( ).108( )
cs3n100f cs3n100p.pdf
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nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N100F,CS3N100P1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N100F TO-220F CS3N100FC
cs3n100f.pdf
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nvertSuzhou Convert Semiconductor Co ., Ltd. CS3N100F1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N100F TO-220F CS3N100FAbsolute Ma
sfp043n100c3 sfb040n100c3.pdf
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SFP043N100C3,SFB040N100C3 N-MOSFET 100V, 3.4m, 120AFeatures Product Summary Extremely low on-resistance RDS(on)VDS 100V Excellent QgxRDS(on) product(FOM)RDS(on) 3.4m Qualified according to JEDEC criteriaID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)SFP
sfb053n100c3.pdf
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SFB053N100C3 N-MOSFET 100V, 4.8m, 120AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 4.8m DS(on) Fast switchingI 120A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC Converte
aot3n100.pdf
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isc N-Channel MOSFET Transistor AOT3N100FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
aotf3n100.pdf
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isc N-Channel MOSFET Transistor AOTF3N100FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
![3N100](https://alltransistors.com/images/us.png)
![3N100](https://alltransistors.com/images/es.png)
![3N100](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
BJT: 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS | HSA1037AKR | HSA1037AKQ