Справочник транзисторов. 3N100

 

Биполярный транзистор 3N100 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 3N100
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Корпус транзистора: TO72

 Аналоги (замена) для 3N100

 

 

3N100 Datasheet (PDF)

 0.1. Size:262K  motorola
mtb3n100erev2x.pdf

3N100 3N100

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB3N100E/DDesigner's Data SheetMTB3N100ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface Mount

 0.2. Size:179K  motorola
mtp3n100e.pdf

3N100 3N100

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N100E/DDesigner's Data SheetMTP3N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorN Channel Enhan

 0.3. Size:226K  motorola
mtb3n100e.pdf

3N100 3N100

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB3N100E/DDesigner's Data SheetMTB3N100ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface Mount

 0.5. Size:206K  motorola
mtp3n100e-.pdf

3N100 3N100

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N100E/DDesigner's Data SheetMTP3N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorN Channel Enhan

 0.6. Size:286K  st
stp3n100xi.pdf

3N100 3N100

 0.7. Size:366K  st
stp3n100.pdf

3N100 3N100

STP3N100STP3N100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP3N100 1000 V

 0.8. Size:184K  ixys
ixta3n100d2hv.pdf

3N100 3N100

Preliminary Technical InformationHigh Voltage VDSX = 1000VIXTA3N100D2HVDepletion Mode ID(on) > 3AMOSFET RDS(on) 6 DN-ChannelGTO-263HVSGSD (Tab)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1000 VG = Gate D = DrainVGSX Continuous 20 VS = Source Tab = DrainVGSM Transient 30 VPD TC = 25C 1

 0.9. Size:150K  ixys
ixta3n100p ixth3n100p ixtp3n100p.pdf

3N100 3N100

IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)

 0.10. Size:329K  aosemi
aot3n100.pdf

3N100 3N100

AOT3N100/AOTF3N1001000V,2.8A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT3N100 & AOTF3N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 0.11. Size:329K  aosemi
aotf3n100.pdf

3N100 3N100

AOT3N100/AOTF3N1001000V,2.8A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT3N100 & AOTF3N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 0.12. Size:410K  chenmko
t03n100gp.pdf

3N100 3N100

CHENMKO ENTERPRISE CO.,LTDT03N100GPSURFACE MOUNT NPN Silicon Transistor VOLTAGE 100Volts CURRENT 3 AmpereAPPLICATION* General purpose applications.* Other switching applications.TO-220FEATURE* Package. (TO-220)* DC Current Gain Specified to Ic=3A( ).187 4.7( ).148 3.8( ).153 3.9* High Current Gain-Bandwidth Product : fT=3MHz (Min.) .413 10.5( ).108( )

 0.13. Size:429K  convert
cs3n100f cs3n100p.pdf

3N100 3N100

nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N100F,CS3N100P1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N100F TO-220F CS3N100FC

 0.14. Size:397K  convert
cs3n100f.pdf

3N100 3N100

nvertSuzhou Convert Semiconductor Co ., Ltd. CS3N100F1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N100F TO-220F CS3N100FAbsolute Ma

 0.15. Size:261K  inchange semiconductor
aot3n100.pdf

3N100 3N100

isc N-Channel MOSFET Transistor AOT3N100FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 0.16. Size:252K  inchange semiconductor
aotf3n100.pdf

3N100 3N100

isc N-Channel MOSFET Transistor AOTF3N100FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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