All Transistors. 3N100 Datasheet

 

3N100 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3N100

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 3 MHz

Noise Figure, dB: -

Package: TO72

3N100 Transistor Equivalent Substitute - Cross-Reference Search

 

3N100 Datasheet (PDF)

1.1. t03n100gp.pdf Size:410K _update

3N100
3N100

CHENMKO ENTERPRISE CO.,LTD T03N100GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 100Volts CURRENT 3 Ampere APPLICATION * General purpose applications. * Other switching applications. TO-220 FEATURE * Package. (TO-220) * DC Current Gain Specified to Ic=3A ( ) .187 4.7 ( ) .148 3.8 ( ) .153 3.9 * High Current Gain-Bandwidth Product : fT=3MHz (Min.) .413 10.5 ( ) .108 ( )

1.2. mtp3n100e.pdf Size:179K _motorola

3N100
3N100

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N100E/D Designer's? Data Sheet MTP3N100E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 3.0 AMPERES scheme to provide enhanced voltageblocking capability without 1000 VOLTS degrading perfo

 1.3. mtb3n100e.pdf Size:226K _motorola

3N100
3N100

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB3N100E/D Designer's? Data Sheet MTB3N100E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 3.0 AMPERES 1000 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 4.0 OHM than any existing surface mount packa

1.4. mtp3n100e-.pdf Size:206K _motorola

3N100
3N100

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N100E/D Designer's? Data Sheet MTP3N100E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 3.0 AMPERES scheme to provide enhanced voltageblocking capability without 1000 VOLTS degrading perfo

 1.5. mtb3n100erev2x.pdf Size:262K _motorola

3N100
3N100

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB3N100E/D Designer's? Data Sheet MTB3N100E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 3.0 AMPERES 1000 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 4.0 OHM than any existing surface mount packa

1.6. stp3n100.pdf Size:366K _st

3N100
3N100

STP3N100 STP3N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP3N100 1000 V < 5 ? 3.5 A STP3N100FI 1000 V < 5 ? 2 A AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE 3 3 LOW GATE CHARGE 2 2 1 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH

1.7. ixta3n100d2hv.pdf Size:184K _ixys

3N100
3N100

Preliminary Technical Information High Voltage VDSX = 1000V IXTA3N100D2HV Depletion Mode ID(on) > 3A MOSFET   RDS(on)    6     D N-Channel G TO-263HV S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1000 V G = Gate D = Drain VGSX Continuous 20 V S = Source Tab = Drain VGSM Transient 30 V PD TC = 25C 1

1.8. aotf3n100.pdf Size:329K _aosemi

3N100
3N100

AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary VDS 1100@150℃ The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 6Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along wit

1.9. aot3n100.pdf Size:329K _aosemi

3N100
3N100

AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary VDS 1100@150℃ The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 6Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along wit

Datasheet: 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .

 
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