3N100 Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB3N100E/DDesigner's Data SheetMTB3N100ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 3.0 AMPERES1000 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 4.0 OHMthan any existing surface

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N100E/DDesigner's Data SheetMTP3N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination3.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB3N100E/DDesigner's Data SheetMTB3N100ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 3.0 AMPERES1000 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 4.0 OHMthan any existing surface

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N100E/DDesigner's Data SheetMTP3N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination3.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde

STP3N100STP3N100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP3N100 1000 V

Preliminary Technical InformationHigh Voltage VDSX = 1000VIXTA3N100D2HVDepletion Mode ID(on) > 3AMOSFET RDS(on) 6 DN-ChannelGTO-263HVSGSD (Tab)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1000 VG = Gate D = DrainVGSX Continuous 20 VS = Source Tab = DrainVGSM Transient 30 VPD TC = 25C 1

IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)

AOT3N100/AOTF3N1001000V,2.8A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT3N100 & AOTF3N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

AOT3N100/AOTF3N1001000V,2.8A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT3N100 & AOTF3N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

BL3N100E Power MOSFET 1Description Step-Down Converter BL3N100E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS P

BL3N100 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BL3N100, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio

CHENMKO ENTERPRISE CO.,LTDT03N100GPSURFACE MOUNT NPN Silicon Transistor VOLTAGE 100Volts CURRENT 3 AmpereAPPLICATION* General purpose applications.* Other switching applications.TO-220FEATURE* Package. (TO-220)* DC Current Gain Specified to Ic=3A( ).187 4.7( ).148 3.8( ).153 3.9* High Current Gain-Bandwidth Product : fT=3MHz (Min.) .413 10.5( ).108( )

nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N100F,CS3N100P1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N100F TO-220F CS3N100FC

nvertSuzhou Convert Semiconductor Co ., Ltd. CS3N100F1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N100F TO-220F CS3N100FAbsolute Ma

SFP043N100C3,SFB040N100C3 N-MOSFET 100V, 3.4m, 120AFeatures Product Summary Extremely low on-resistance RDS(on)VDS 100V Excellent QgxRDS(on) product(FOM)RDS(on) 3.4m Qualified according to JEDEC criteriaID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)SFP

SFB053N100C3 N-MOSFET 100V, 4.8m, 120AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 4.8m DS(on) Fast switchingI 120A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC Converte

isc N-Channel MOSFET Transistor AOT3N100FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor AOTF3N100FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp