9013G - описание и поиск аналогов

9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absol

MCC S9013-G TM Micro Commercial Components 20736 Marilla Street Chatsworth S9013-H Micro Commercial Components CA 91311 S9013-I Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating and

MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Po

CHENMKO ENTERPRISE CO.,LTD CHT9013GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 FEATURE * Surface mount package. (SOT-23) * Suitable for high packing density. (1) CONSTRUCTION (3) *NPN Silicon Transistor (2) MARKING * HFE(L) J3 ( ) ( ) .055 1.

S9013 TRANSISTOR (NPN) FEATURES Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE 3. COLLECTOR Equivalent Circuit Collector-Base Voltage 40 V Collector-Emitter Voltage 25 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.5 A Co