All Transistors. 9013G Datasheet

 

9013G Datasheet and Replacement


   Type Designator: 9013G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 118
   Noise Figure, dB: -
   Package: TO92
 

 9013G Substitution

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9013G Datasheet (PDF)

 ..1. Size:167K  semtech
9013g 9013h 9013i.pdf pdf_icon

9013G

9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsol

 0.1. Size:192K  mcc
s9013h s9013g s9013i.pdf pdf_icon

9013G

MCCS9013-GTM Micro Commercial Components20736 Marilla Street Chatsworth S9013-HMicro Commercial ComponentsCA 91311S9013-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating and

 0.2. Size:676K  semtech
mmbt9013g mmbt9013h.pdf pdf_icon

9013G

MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 500 mAPo

 0.3. Size:181K  chenmko
cht9013gp.pdf pdf_icon

9013G

CHENMKO ENTERPRISE CO.,LTDCHT9013GPSURFACE MOUNT NPN Silicon TransistorVOLTAGE 25Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SOT-23FEATURE* Surface mount package. (SOT-23)* Suitable for high packing density.(1)CONSTRUCTION(3)*NPN Silicon Transistor(2)MARKING* HFE(L):J3( ) ( ).055 1.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - 9013G transistor datasheet

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