9013G Datasheet, Equivalent, Cross Reference Search
Type Designator: 9013G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 118
Noise Figure, dB: -
Package: TO92
9013G Transistor Equivalent Substitute - Cross-Reference Search
9013G Datasheet (PDF)
9013g 9013h 9013i.pdf
9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsol
s9013h s9013g s9013i.pdf
MCCS9013-GTM Micro Commercial Components20736 Marilla Street Chatsworth S9013-HMicro Commercial ComponentsCA 91311S9013-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating and
mmbt9013g mmbt9013h.pdf
MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 500 mAPo
cht9013gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT9013GPSURFACE MOUNT NPN Silicon TransistorVOLTAGE 25Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SOT-23FEATURE* Surface mount package. (SOT-23)* Suitable for high packing density.(1)CONSTRUCTION(3)*NPN Silicon Transistor(2)MARKING* HFE(L):J3( ) ( ).055 1.
s9013d s9013e s9013f s9013g s9013h s9013i s9013j.pdf
S9013TRANSISTOR (NPN) FEATURES Complementary to S90121. EMITTER Excellent hFE linearity2. BASE3. COLLECTOREquivalent Circuit Collector-Base Voltage 40 V Collector-Emitter Voltage 25 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.5 A Co
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .