Биполярный транзистор BC547 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BC547
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hfe): 110
Корпус транзистора: TO92
BC547 Datasheet (PDF)
bc546 bc547 bc548.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC546/DAmplifier TransistorsBC546, BNPN SiliconBC547, A, B, CBC548, A, B, CCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC546 547 548Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 65 45 30 VdcCollectorBase Voltage VCBO 80 50 30 VdcEmitt
bc546 bc547 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC546; BC547NPN general purpose transistors1999 Apr 15Product specificationSupersedes data of 1997 Mar 04Philips Semiconductors Product specificationNPN general purpose transistors BC546; BC547FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 emitter2 baseAPPLICATIONS
bc847 bc547 ser.pdf
BC847/BC547 series45 V, 100 mA NPN general-purpose transistorsRev. 07 10 December 2008 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in small plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC847 SOT23 - TO-236AB BC857BC847A BC857ABC847B BC857BBC847B/DG -BC847C BC857CBC847W
bc546 bc547.pdf
Phi I i ps Semi cnduct rsPrduct speci ficat i n Phi l i ps Semi conduct ors Product speci ficat i onNPN generaI purpse t ransi st rsBC546; BC547 NPN gener al purpose t ransist orsBC546; BC547FEATURES PI NNI NG THERMAL CHARACTERI STI CS Low cur r ent (max. 100mA)PINDESCRI PTI ON SYMBOLPARAMETERCONDI TI ONS VALUE UNI T Low vol t age (max. 65 V).1 emi t t er Rthj-a t
bc546 bc547 bc548 bc549 bc550.pdf
BC546/547/548/549/550Switching and Applications High Voltage: BC546, VCEO=65V Low Noise: BC549, BC550 Complement to BC556 ... BC560TO-9211. Collector 2. Base 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC546 80 V: BC547/550 50 V: BC548/549 30 VVCE
bc547 bc547a bc547b bc547c.pdf
Discrete POWER & SignalTechnologiesBC547BC547ABC547BBC547CE TO-92BCNPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourced fromProcess 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-
bc546 bc547 bc548 to-92.pdf
BC546A/B/CMCCMicro Commercial C omponentsTMBC547A/B/C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933BC548A/B/CFax: (818) 701-4939FeaturesNPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Amplifier Transistor Through Hole Package 150 C Junction Tempe
bc546 bc547 bc548.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC546, A, B, CNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC547, A. B, CBC548, A. B, CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with EB "T"CAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC546 BC547 BC548 UNITSCollector Em
bc546 bc547 bc548.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsBC546 / BC547 / BC548 TRANSISTOR (NPN)TO-92 FEATURES High Voltage Complement to BC556,BC557,BC5581. COLLECTOR 2. BASE 3. EMITTER BC546 BC547 BC548 Z XXX Z XXX Z XXX1 1 1Equivalent Circuit BC546,BC547,BC548=Device code Solid dot=Green molding compound device, i
bc546 bc547 bc548.pdf
SEMICONDUCTOR BC546/7/8TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .B CFEATURESHigh Voltage : BC546 VCEO=65V.N DIM MILLIMETERSFor Complementary With PNP Type BC556/557/558.A 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25)H 0.45_H J 14.00 + 0.50CHARACTERISTIC S
bc548 bc547 bc546.pdf
BC546/BC547/BC548(NPN)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER FeaturesHigh Voltage Complement to BC556,BC557,BC558 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage BC546 80 BC547 50 VCBO V BC548 30 Collector-Emitter Voltage BC546 65 VCEO BC547 45 V BC548 30 Dimensions in i
bc546 bc547 bc548.pdf
BC546/BC547/BC548(NPN)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTERFeaturesHigh Voltage Complement to BC556,BC557,BC558 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage BC546 80 BC547 50 VCBO V BC548 30 Collector-Emitter Voltage BC546 65 VCEO BC547 45 V BC548 30 6 VEBO Emitter-Ba
bc546 bc547 bc548.pdf
BC546, A/BBC547, A/B/CBC548, A/B/CNPN General Purpose Transistor COLLECTOR1TO-922BASE1233EMITTERMaximum Ratings( T =25C unless otherwise noted)ARating Symbol BC546 BC547 BC548 UnitCollector-Emitter Voltage VECO 65 45 30VdcCollector-Base Voltage V 80 50 30 VdcCBOEmitter-Base Voltage VEBO 6 6 6 VdcCollector Current Continuous lC 100mAdcTHERMAL CHA
bc547.pdf
BC547 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92(R) NPN Silicon NPN transistor in a TO-92(R) Plastic Package. / Features High Voltage, Low Noise. / Applications General purpose and switching application. / Equivalent Circuit
bc547b bc547c.pdf
BC547BBC547CSMALL SIGNAL NPN TRANSISTORSOrdering Code Marking Package / ShipmentBC547B BC547B TO-92 / BulkBC547B-AP BC547B TO-92 / AmmopackBC547C BC547C TO-92 / BulkBC547C-AP BC547C TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTORS TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLYTO-92 TO-92 BC547B - THE PNP COMPLEMENTARYBulk AmmopackTYPE IS BC557BAP
bc546abu bc546ata bc546bta bc546btf bc546cta bc547ata bc547b bc547bbu bc547bta bc547btf bc547cbu bc547cta bc547ctfr bc548bu bc548bta bc548cta bc549bta bc549btf bc549cta bc550cbu bc550cta.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
bc546b bc547a-b-c bc548b-c.pdf
BC546B, BC547A, B, C,BC548B, CAmplifier TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGS2BASERating Symbol Value UnitCollector - Emitter Voltage VCEO VdcBC546 653BC547 45EMITTERBC548 30Collector - Base Voltage VCBO VdcBC546 80BC547 50BC548 30TO-92Emitter - Base Voltage VEBO 6.0 VdcCASE 2
sbc547.pdf
SBC547NPN Silicon TransistorDescriptions PIN Connection General purpose application C Switching application BFeatures High voltage : VCEO=45V E Complementary pair with SBC557 TO-92 Ordering Information Type NO. Marking Package Code SBC547 SBC547 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-Base volt
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BC546A/B/C - BC550A/B/C Taiwan Semiconductor 500mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 30-80 V High surge current capability VCEO 30-65 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free accordi
bc547ba3.pdf
Spec. No. : C204A3 Issued Date : 2015.01.23 CYStech Electronics Corp.Revised Date : Page No. : 1 / 7 General Purpose NPN Epitaxial Planar Transistor BC547BA3Description The BC547BA3 is designed for use in driver stage of AF amplifier and low speed switching. Complementary to BC557BA3. Pb-free package Symbol Outline BC547BA3 TO-92 BBase CCollector
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BC546xBK ... BC549xBKBC546xBK ... BC549xBKGeneral Purpose Si-Epitaxial Planar TransistorsNPN NPNSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2009-12-030.1Power dissipation Verlustleistung 500 mW4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gC B EPlastic material has UL classification 94V-0Gehusematerial
Другие транзисторы... BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , A1941 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .
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BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS