BD438 - Аналоги. Основные параметры
Наименование производителя: BD438
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 36
W
Макcимально допустимое напряжение коллектор-база (Ucb): 45
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 4
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 3
MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
TO126
Аналоги (замена) для BD438
-
подбор ⓘ биполярного транзистора по параметрам
BD438 - технические параметры
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bd433 bd435 bd437 bd434 bd436 bd438.pdf 

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in 1 2 car-radio output
..3. Size:51K st
bd433 bd434 bd435 bd436 bd437 bd438.pdf 

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. 1 2 The BD433 is especially suitable for use in 3 car
..4. Size:160K st
bd434 bd436 bd438.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..5. Size:42K fairchild semi
bd434 bd436 bd438.pdf 

BD434/436/438 Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD434 - 22 V BD436 - 32 V BD438 - 45 V VCES Collector-Emitter Voltage
..6. Size:13K samsung
bd434 bd436 bd438.pdf 

BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS Complement to BD433, BD435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit BD434 Collector Base Voltage VCBO - 22 V BD436 - 32 V BD438 - 45 V BD434 Collector Emitter Voltage VCES - 22 V BD436 - 32 V BD438 - 45 V BD434 Collector
..7. Size:58K onsemi
bd436 bd438 bd440 bd442.pdf 

BD436, BD438, BD440, BD442 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium-power silicon PNP transistors can be used for for amplifier and switching applications. Complementary http //onsemi.com types are BD437 and BD441. 4.0 AMP POWER Features TRANSISTORS PNP SILICON Pb-Free Packages are Available* TO-225AA MAXIMUM RATINGS
..8. Size:41K onsemi
bd434 bd436 bd438.pdf 

BD434/436/438 Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD434 - 22 V BD436 - 32 V BD438 - 45 V VCES Collector-Emitter Voltage
..9. Size:130K cdil
bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD433 BD434 BD435 BD436 BD437 BD438 BD439 BD440 BD441 BD442 NPN PNP E C TO126 B Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNIT BD434 BD436
..10. Size:415K jiangsu
bd434 bd436 bd438.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD434 / BD436 / BD438 TRANSISTOR (PNP) TO 126 FEATURES 1. EMITTER Amplifier and Switching Applications Complement To BD433, BD435 And BD437 2. COLLECTOR 3. BASE Equivalent Circuit BD434 BD436 BD438 XX XX XX BD434,BD436,BD438=Device code Solid dot = Green moldin
..11. Size:183K lge
bd438 bd440 bd442.pdf 

BD438/440/442(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features 2.500 7.400 2.900 1.100 7.800 1.500 Amplifier and switching applications 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.200 10.600 Symbol Parameter Value Units 0.000 11.000 0.300 VCBO Collector-Base Voltage BD438 -45 BD440 -60 V 2.100 BD4
..12. Size:189K inchange semiconductor
bd438.pdf 

isc Silicon PNP Power Transistor BD438 DESCRIPTION Collector-Emitter Sustaining Voltage - V = -45V(Min) CEO(SUS) Complement to type BD437 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-B
..13. Size:118K inchange semiconductor
bd434 bd436 bd438.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD434/436/438 DESCRIPTION With TO-126 package Complement to type BD433/435/437 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIO
0.1. Size:58K onsemi
bd438g.pdf 

BD436, BD438, BD440, BD442 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium-power silicon PNP transistors can be used for for amplifier and switching applications. Complementary http //onsemi.com types are BD437 and BD441. 4.0 AMP POWER Features TRANSISTORS PNP SILICON Pb-Free Packages are Available* TO-225AA MAXIMUM RATINGS
0.2. Size:200K secos
bd438-440-442.pdf 

BD438/BD440/BD442 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product TO-126 Features A suffix of "-C" specifies halogen & lead-free 3.2 0.2 8.0 0.2 0.2 * Amplifier and switching applications 2.0 4.14 0.1 o MAXIMUM RATINGS* TA=25 C unless otherwise noted O2.8 0.1 O3.2 0.1 11.0 0.2 Symbol Parameter Value Units 1.4 0.1 1 2
0.3. Size:41K hsmc
hbd438t.pdf 

Spec. No. HT200206 HI-SINCERITY Issued Date 2001.04.01 Revised Date 2005.12.02 MICROELECTRONICS CORP. Page No. 1/4 HBD438T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary NPN type is HBD437T. TO-126 A
0.4. Size:119K shantou-huashan
hsbd438.pdf 

PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD438 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25
Другие транзисторы... BD436
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