BD438 Datasheet and Replacement

Order this documentMOTOROLAby BD438/DSEMICONDUCTOR TECHNICAL DATABD438BD440Plastic Medium Power SiliconBD442PNP Transistor. . . for amplifier and switching applications. Complementary types are BD437 andBD441.4.0 AMPERESPOWER TRANSISTORSPNP SILICONCASE 7708

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.The BD433 is especially suitable for use in12car-radio output

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.12The BD433 is especially suitable for use in3car

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BD434/436/438Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD434 - 22 V: BD436 - 32 V: BD438 - 45 V VCES Collector-Emitter Voltage:

BD434/436/438 PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR AND SWITCHINGAPPLICATIONS Complement to BD433, BD435 and BD437 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit: BD434 Collector Base Voltage VCBO - 22 V: BD436- 32 V: BD438- 45 V: BD434 Collector Emitter Voltage VCES - 22 V: BD436 - 32 V: BD438- 45 V: BD434 Collector

BD436, BD438, BD440,BD442Plastic Medium PowerSilicon PNP TransistorThis series of plastic, medium-power silicon PNP transistors can beused for for amplifier and switching applications. Complementaryhttp://onsemi.comtypes are BD437 and BD441.4.0 AMP POWERFeaturesTRANSISTORS PNP SILICON Pb-Free Packages are Available*TO-225AAMAXIMUM RATINGS

BD434/436/438Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD434 - 22 V: BD436 - 32 V: BD438 - 45 V VCES Collector-Emitter Voltage:

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL SILICON POWER TRANSISTORS BD433 BD434BD435 BD436BD437 BD438BD439 BD440BD441 BD442NPN PNPECTO126 BPlastic PackageIntended for use in Medium Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNITBD434 BD436

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsBD434 / BD436 / BD438 TRANSISTOR (PNP)TO 126 FEATURES 1. EMITTER Amplifier and Switching Applications Complement To BD433, BD435 And BD437 2. COLLECTOR3. BASE Equivalent Circuit BD434 BD436 BD438 XX XX XXBD434,BD436,BD438=Device code Solid dot = Green moldin

BD438/440/442(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECOTR 3. BASE 3 21 Features 2.5007.4002.9001.1007.8001.500 Amplifier and switching applications 3.900 3.0004.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.20010.600Symbol Parameter Value Units0.00011.0000.300VCBO Collector-Base Voltage BD438 -45 BD440 -60 V 2.100BD4

isc Silicon PNP Power Transistor BD438DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = -45V(Min)CEO(SUS)Complement to type BD437Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-B

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD434/436/438 DESCRIPTION With TO-126 package Complement to type BD433/435/437 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIO

BD436, BD438, BD440,BD442Plastic Medium PowerSilicon PNP TransistorThis series of plastic, medium-power silicon PNP transistors can beused for for amplifier and switching applications. Complementaryhttp://onsemi.comtypes are BD437 and BD441.4.0 AMP POWERFeaturesTRANSISTORS PNP SILICON Pb-Free Packages are Available*TO-225AAMAXIMUM RATINGS

BD438/BD440/BD442 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductTO-126FeaturesA suffix of "-C" specifies halogen & lead-free3.20.28.00.20.2* Amplifier and switching applications 2.04.140.1o MAXIMUM RATINGS* TA=25 C unless otherwise noted O2.80.1 O3.20.111.00.2Symbol Parameter Value Units1.40.11 2

Spec. No. : HT200206HI-SINCERITYIssued Date : 2001.04.01Revised Date : 2005.12.02MICROELECTRONICS CORP.Page No. : 1/4HBD438TCOMPLEMENTARY SILICON POWER TRANSISTORSDescriptionThe HBD438T is silison epitaxial-base PNP power transistor in TO-126 plasticpackage, intented for use in medium power linear and switching applications. Thecomplementary NPN type is HBD437T.TO-126A

PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD438 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25