Биполярный транзистор BD540C - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD540C
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 45 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO220
BD540C Datasheet (PDF)
bd540c.pdf
isc Silicon PNP Power Transistor BD540CDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOComplement to Type BD539CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RAT
bd540-a-b-c.pdf
BD540, BD540A, BD540B, BD540CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD539 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector CurrentB 1 Customer-Specified Selections AvailableC 2E 3Pin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximum ratings at 25C case temperatu
bd540.pdf
BD540, BD540A, BD540B, BD540CPNP SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD539 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector CurrentB 1C 2 Customer-Specified Selections AvailableE 3Pin 2 is in electrical contact with the moun
bd540a.pdf
isc Silicon PNP Power Transistor BD540ADESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOComplement to Type BD539AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATI
bd540.pdf
isc Silicon PNP Power Transistor BD540DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOComplement to Type BD539Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATING
bd540b.pdf
isc Silicon PNP Power Transistor BD540BDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOComplement to Type BD539BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATI
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050