BD540C PDF and Equivalents Search

isc Silicon PNP Power Transistor BD540C DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -0.5A FE C Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Complement to Type BD539C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RAT... See More ⇒

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD539 Series TO-220 PACKAGE (TOP VIEW) 45 W at 25 C Case Temperature 5 A Continuous Collector Current B 1 Customer-Specified Selections Available C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25 C case temperatu... See More ⇒

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD539 Series TO-220 PACKAGE (TOP VIEW) 45 W at 25 C Case Temperature 5 A Continuous Collector Current B 1 C 2 Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the moun... See More ⇒

isc Silicon PNP Power Transistor BD540A DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -0.5A FE C Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Complement to Type BD539A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒

isc Silicon PNP Power Transistor BD540 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -0.5A FE C Collector-Emitter Breakdown Voltage- V = -40V(Min) (BR)CEO Complement to Type BD539 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATING... See More ⇒

isc Silicon PNP Power Transistor BD540B DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -0.5A FE C Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Complement to Type BD539B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒