BD540C Datasheet and Replacement

isc Silicon PNP Power Transistor BD540CDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOComplement to Type BD539CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RAT

BD540, BD540A, BD540B, BD540CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD539 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector CurrentB 1 Customer-Specified Selections AvailableC 2E 3Pin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximum ratings at 25C case temperatu

BD540, BD540A, BD540B, BD540CPNP SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD539 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector CurrentB 1C 2 Customer-Specified Selections AvailableE 3Pin 2 is in electrical contact with the moun

isc Silicon PNP Power Transistor BD540ADESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOComplement to Type BD539AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATI

isc Silicon PNP Power Transistor BD540DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOComplement to Type BD539Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATING

isc Silicon PNP Power Transistor BD540BDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOComplement to Type BD539BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATI