Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS C100 PNPD100 NPNTO-92Plastic PackageECBThese are complementary transistors for medium power voltage and current amplifierapplications.ABSOLUTE MAXIMUM RATINGS (Ta=25C Unless Specified Otherwise)DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L-B Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L-B 80 V100A3.0m@10VDESCRIPTION These N-Channel enhancement mode power field effect transistors areusing SGT technology.This advanced technology has been especiallytailored to minimize on-state resistance, pr

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.3m@-10V-30 V-100A3.4m@-4.5VDESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU

PD - 93874IRGC100B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark E

PD - 94618AIRGC100B60KBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=100A Low VCE(on)VCE(on) typ.=1.9V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE

PD - 94716IRGC100B60UBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=100A Low VCE(on)VCE(on) typ. = 2.8V 10s Short Circuit Capability Square RBSOA @ IC(nom) @ 25C Positive VCE(on) Temperature CoefficientUPS IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for UPS and Welding ApplicationsE150mm Waf

PD - 93873BIRGC100B120UBDie in Wafer Form1200VFeaturesC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit CapabilityIC(nom) @ 25C Square RBSOA Positive VCE(on) Temperature Coefficient UltraFast IGBTGBenefitsShort Circuit RatedE Benchmark Efficiency above 20KHz150mm Wafer

PD - 93873IRGC100B120UBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientUltraFast IGBTGBenefitsShort Circuit Rated Benchmark Effic

MSC1004MPRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.1025 - 1150 MHz.RUGGEDIZED VSWR :1.INTERNAL INPUT MATCHING.LOW THERMAL RESISTANCE.P 4.0 W MIN. WITH 9.0 dB GAINOUT =.280 4LFL (SO51)epoxy sealedORDER CODE BRANDINGMSC1004MP 1004MPPIN CONNECTIONDESCRIPTIONThe MSC1004MP is a low-level Class C pulsedtransistor specifically designed for DME/IFF driveror ou

MSC1000MPRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.RUGGEDIZED VSWR :1.INPUT MATCHING.LOW THERMAL RESISTANCE.CLASS A OPERATION.P 0.6 W MIN. WITH 10.8 dB GAINOUT =.280 4LSL (S053)epoxy sealedORDER CODE BRANDINGMSC1000MP 1000MPPIN CONNECTIONDESCRIPTIONThe MSC1000MP is a Class A, common emittertransistor with an emitter ballasted Matrix geo-metry specifi

MSC1000MRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.RUGGEDIZED VSWR :1.INPUT MATCHING.LOW THERMAL RESISTANCE.CLASS A OPERATION.P 0.6 W MIN. WITH 10.8 dB GAINOUT =.280 2LFL (S058)epoxy sealedORDER CODE BRANDINGMSC1000M 1000MPIN CONNECTIONDESCRIPTIONThe MSC1000M is a Class A, common emittertransistor with an emitter ballasted Matrix geo-metry specificall

MSC1004MRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.1025 - 1150 MHz.RUGGEDIZED VSWR :1.INTERNAL INPUT MATCHING.LOW THERMAL RESISTANCE.P 4.0 W MIN. WITH 9.0 dB GAINOUT =.280 2LFL (SO68)epoxy sealedORDER CODE BRANDINGMSC1004M 1004MPIN CONNECTIONDESCRIPTIONThe MSC1004M is a low-level Class C pulsedtransistor specifically designed for DME/IFF driveror output

September 2006KSC1008tmNPN Epitacial Silicon TransistorFeatures Low frequency amplifier medium speed switching. High Collector-Base Voltage : VCBO=80V. Collector Current : IC=700mA Collector Power Dissipation : PC=800mWTO-92 Suffix -C means Center Collector (1.Emitter 2.Collector 3.Base) Non suffix -C means Side Collector (1.Emitter 2.Base 3.C

KSC1009High Voltage Amplifier High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted S

RF4C100BCDatasheetPch -20V -10A Middle Power MOSFETlOutlinel HUML2020L8VDSS-20VRDS(on)(Max.) 15.6mID 10APD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package(HUML2020L8).3) Pb-free lead plating ; RoHS compliant.4) Halog

IPC100N04S5-1R2OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.2 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

TypeBSC100N06LS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 10 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compli

IAUC100N04S6N015OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.5mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

SIGC100T65R3E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC100T65R

IAUC100N04S6L020OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.0mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

IPC100N04S5L-2R6OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 2.6 mW ID 100 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanc

IPC100N04S5-1R9OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.9 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

IAUC100N08S5N043OptiMOS-5 Power-TransistorProduct SummaryVDS 80 VRDS(on) 4.3mWID 100 AFeatures N-channel - Enhancement modePG-TDSON-8 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 1 100% Avalanche tested1Type Package MarkingPG-TDSON-8 5N08043IAUC100N08S5N043Maximum ratings,

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BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

IAUC100N04S6L014OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.4mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

IPC100N04S5-2R8OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 2.8 mW ID 100 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanc

IAUC100N04S6N028OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.8mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

SIGC100T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

IAUC100N04S6N022OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.2mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

IPC100N04S5L-1R1OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.1 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

IAUC100N04S6L025OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.5mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

IAUC100N10S5N040OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 4mID 100 AFeatures N-channel - Enhancement mode - Normal levelPG-TDSON-8 AEC qualified MSL1 up to 260C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI)1Type Package MarkingIAUC100N10S5N040 PG-TDSON-8 5N1N040Maximum ratings, at T =25

IGC100T65T8RMIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC100T6

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IAUC100N10S5L040OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 4mWID 100 AFeatures N-channel - Enhancement mode - Logic levelPG-TDSON-8 AEC qualified MSL1 up to 260C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI)1Type Package MarkingIAUC100N10S5L040 PG-TDSON-8 5N10L040Maximum ratings, at T =25 C

SIGC100T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

IPC100N04S5L-1R9OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.9 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

IPC100N04S5L-1R5OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.5 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

ADVANCE TECHNICAL INFORMATIONTrench Power MOSFET IXUC100N055 VDSS = 55 VISOPLUS220TM ID25 = 100 AElectrically Isolated Back Surface RDS(on)= 7.7 mISOPLUS 220TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C55 VGDVGS Continuous 20 VSIsolated back surface*ID25 TC = 25C; Note 1 100 AG = Gate, D = Drain,ID90 TC = 90C, Note 1 8

2SC1008-RMCC2SC1008-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1008-YCA 91311Phone: (818) 701-49332SC1008-GFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingEpitaxial Transistor

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MC100EL16485 V ECL Voltage ControlledOscillator AmplifierDescriptionThe MC100EL1648 is a voltage controlled oscillator amplifier thatrequires an external parallel tank circuit consisting of the inductor (L)http://onsemi.comand capacitor (C). A varactor diode may be incorporated into the tankcircuit to provide a voltage variable input for the oscillator (VCO).MARKINGThis devi

2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G HEmitterBase CollectorJCLASSIFICATION OF hFE A DMillimeterREF. Min. Max.Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-GBA

INC1001AC1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC1001AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini package for easy mounting High collector current(IC=500mA) Low coll

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS CSC1008 NPNCSA708 PNPTO-92CBELow Frequency Amplifier.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 80 VCollector -Emitter Voltage VCEO 60 VEmitter -Base Voltage VEBO

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS CSA709 PNPCSC1009 NPNTO-92CBEHigh Voltage Amplifier.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )DESCRIPTION SYMBOL CSA709 CSC1009 UNITCollector -Base Voltage VCBO 160 160 VCollector -Emitter Voltage VCEO 150 140 VEmitter -Base Voltage VEBO 8.0 8.0

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTORNPN TO92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 WTamb=25 2. BASE Collector current 3. COLLECTOR ICM : 0.7 A Collector-base voltage 1 2 3 V(BR)CBO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1008 TRANSISTOR (NPN) 1. EMITTER 2. BASE FEATURES 3. COLLECTOR General Purpose Switching and Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.3m@-10V-30 V-100A3.4m@-4.5VDESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100SN08 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.9m@10V80V100A4.3m@4.5VDESCRIPTION The CJAC100SN08 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Batte

SEMICONDUCTOR KTC1006TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORCB TRANSCEIVER TX DRIVER APPLICATION.B DFEATURES Recommended for Driver Stage Application ofAM 4W Transmitter.DIM MILLIMETERSP High Power Gain.DEPTH:0.2A 7.20 MAX Wide Area of Safe Operation. B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXH 0.55 MAXFFMAXIMUM RATINGS (T

SEMICONDUCTOR KTC1003TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORB/W TV HORIZONTAL DEFLECTION OUTPUT APPLICATION. ACDIM MILLIMETERSS_FEATURES A 10.0 + 0.3_+B 15.0 0.3ELarge Collector Current Capability. C _2.70 0.3+D 0.76+0.09/-0.05Large Collector Power Dissipation Capability._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 1

SEMICONDUCTOR KTC1008TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USEB CFEATURES High Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A.N DIM MILLIMETERS High Transition Frequency : fT=150MHz(Typ.).A 4.70 MAXEKB 4.80 MAX Wide Area of Safe Operation. GC 3.70 MAXD Complementary to KTA708.D 0.45E 1.00F 1

WEITRON2SC1008NPN Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASETO-92MAXIMUM RATINGS (T unless otherwise noted)A=25CParameter Symbol Value UnitsCollector-Base Voltage VVCBO 80ACollector Current ICM 0.7Power Dissipation PCM 0.8 W-55 to +150Junction Temperature TJ C-55 to +150TstgStorage Temperature CELECTRICAL CHARACTE

FHC100 PNP B C D E F G PCM Tc=25 100 W ICM 12 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=2mA 50 100 150 200 250 300 V V(BR)CEO ICE=2mA 50 100 150 200 250 300 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA VBEsat 2.5 V IC

SEMICONDUCTORFTC1008TECHNICAL DATATO 92 FTC1008 TRANSISTOR (NPN) 1. EMITTER2. BASE FEATURES 3. COLLECTOR General Purpose Switching and Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current 700 mA PC Col

SMD Type TransistorsNPN Transistors2SC1009SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=30V 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-2 package BV = 1200V CES Low Conduction Loss : V = 2.8V (typ.) CE(sat)devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at TC=100 Isolation Type

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1008DESCRIPTIONNPN high-voltage transistorLow current (max. 700 mA)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switching and amplificationin high voltage applications , such as telephonyapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

isc Silicon NPN Power Transistor KTC1003DESCRIPTIONLarge Collector Current Capability-: I = 4A (Max)CCollector Power Dissipation-: P = 30W(Max)CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection outputapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1004DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSfor use in horizontal deflection output stages forcolor TV receivesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co