All Transistors. C100 Datasheet

 

C100 Datasheet and Replacement


   Type Designator: C100
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO106
 

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C100 Datasheet (PDF)

 ..1. Size:82K  cdil
c100 d100.pdf pdf_icon

C100

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS C100 PNPD100 NPNTO-92Plastic PackageECBThese are complementary transistors for medium power voltage and current amplifierapplications.ABSOLUTE MAXIMUM RATINGS (Ta=25C Unless Specified Otherwise)DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base

 0.1. Size:1763K  1
cjac100sn08u.pdf pdf_icon

C100

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L-B Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L-B 80 V100A3.0m@10VDESCRIPTION These N-Channel enhancement mode power field effect transistors areusing SGT technology.This advanced technology has been especiallytailored to minimize on-state resistance, pr

 0.2. Size:2466K  1
cjac100p03.pdf pdf_icon

C100

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.3m@-10V-30 V-100A3.4m@-4.5VDESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU

 0.3. Size:15K  international rectifier
irgc100b120k.pdf pdf_icon

C100

PD - 93874IRGC100B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark E

Datasheet: BUYP54 , BVW90 , BVX18A , C055 , C055P , C066 , C066P , C1 , 2SB817 , C1001 , C1002 , C1003 , C1004 , C101 , C102 , C103 , C106 .

History: 3N88 | NSBC123JDP6T5G | 2N3846 | 2SC5414A | 2SD476 | 3N68A

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