C100 Transistor. Datasheet pdf. Equivalent
Type Designator: C100
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO106
C100 Transistor Equivalent Substitute - Cross-Reference Search
C100 Datasheet (PDF)
1.1. 2sc1008-g-o-y-r.pdf 
Size:430K _update
2SC1008-R MCC 2SC1008-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC1008-Y CA 91311 Phone: (818) 701-4933 2SC1008-G Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Epitaxial Transistor
1.2. msc1000.pdf Size:100K _st
MSC1000M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .RUGGEDIZED VSWR :1 ? .INPUT MATCHING .LOW THERMAL RESISTANCE .CLASS A OPERATION .P 0.6 W MIN. WITH 10.8 dB GAIN OUT = .280 2LFL (S058) epoxy sealed ORDER CODE BRANDING MSC1000M 1000M PIN CONNECTION DESCRIPTION The MSC1000M is a Class A, common emitter transistor with an emitter ballasted Matrix geo- metry specifically des
1.3. msc1004m.pdf Size:44K _st
MSC1004M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .1025 - 1150 MHz .RUGGEDIZED VSWR ?:1 .INTERNAL INPUT MATCHING .LOW THERMAL RESISTANCE .P 4.0 W MIN. WITH 9.0 dB GAIN OUT = .280 2LFL (SO68) epoxy sealed ORDER CODE BRANDING MSC1004M 1004M PIN CONNECTION DESCRIPTION The MSC1004M is a low-level Class C pulsed transistor specifically designed for DME/IFF driver or output appl
1.4. msc1000m.pdf Size:98K _st
MSC1000MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .RUGGEDIZED VSWR :1 ? .INPUT MATCHING .LOW THERMAL RESISTANCE .CLASS A OPERATION .P 0.6 W MIN. WITH 10.8 dB GAIN OUT = .280 4LSL (S053) epoxy sealed ORDER CODE BRANDING MSC1000MP 1000MP PIN CONNECTION DESCRIPTION The MSC1000MP is a Class A, common emitter transistor with an emitter ballasted Matrix geo- metry specifically
1.5. msc1004mp.pdf Size:42K _st
MSC1004MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .1025 - 1150 MHz .RUGGEDIZED VSWR ?:1 .INTERNAL INPUT MATCHING .LOW THERMAL RESISTANCE .P 4.0 W MIN. WITH 9.0 dB GAIN OUT = .280 4LFL (SO51) epoxy sealed ORDER CODE BRANDING MSC1004MP 1004MP PIN CONNECTION DESCRIPTION The MSC1004MP is a low-level Class C pulsed transistor specifically designed for DME/IFF driver or output
1.6. ksc1008.pdf Size:149K _fairchild_semi
September 2006 KSC1008 tm NPN Epitacial Silicon Transistor Features Low frequency amplifier medium speed switching. High Collector-Base Voltage : VCBO=80V. Collector Current : IC=700mA Collector Power Dissipation : PC=800mW TO-92 Suffix -C means Center Collector (1.Emitter 2.Collector 3.Base) Non suffix -C means Side Collector (1.Emitter 2.Base 3.Collector) 1 2 3 KSC1
1.7. ksc1009.pdf Size:37K _fairchild_semi
KSC1009 High Voltage Amplifier High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ra
1.8. irgc100b120k.pdf Size:15K _international_rectifier
PD - 93874 IRGC100B120KB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Mot
1.9. irgc100b120u.pdf Size:15K _international_rectifier
PD - 93873 IRGC100B120UB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor C
1.10. irgc100b120kb.pdf Size:43K _international_rectifier
1.11. irgc100b120ub.pdf Size:43K _international_rectifier
1.12. 2sc1009a.pdf Size:325K _nec
1.13. bsc100n03msg_rev1.16.pdf Size:677K _infineon
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Q *3 7B66 A=2D:?8 , @"- 1.17. mc100el1648.pdf
MC100EL1648
5 V ECL Voltage Controlled
Oscillator Amplifier
Description
The MC100EL1648 is a voltage controlled oscillator amplifier that
requires an external parallel tank circuit consisting of the inductor (L)
http://onsemi.com
and capacitor (C). A varactor diode may be incorporated into the tank
circuit to provide a voltage variable input for the oscillator (VCO).
MARKING
This device 1.18. 2sc1008.pdf
2SC1008
0.7A , 80 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
? General Purpose Switching and Amplification.
G H
?Emitter
?Base
?Collector
J
CLASSIFICATION OF hFE A D
Millimeter
REF.
Min. Max.
Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G
B
A 4.40 4.70
1.19. inc1001ac1.pdf
INC1001AC1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING UNIT：mm
2.8
INC1001AC1 is a silicon NPN epitaxial type transistor.
0.65 1.5 0.65
It is designed with high collector current and small VCE(sat).
FEATURE
①
・Super mini package for easy mounting
・High collector current(IC=500mA)
②
③
・Low coll 1.20. csa709_csc1009.pdf
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS CSA709 PNP
CSC1009 NPN
TO-92
CBE
High Voltage Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION SYMBOL CSA709 CSC1009 UNIT
Collector -Base Voltage VCBO 160 160 V
Collector -Emitter Voltage VCEO 150 140 V
Emitter -Base Voltage VEBO 8.0 8.0 V
1.21. c100_d100.pdf
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS C100 PNP
D100 NPN
TO-92
Plastic Package
E
CB
These are complementary transistors for medium power voltage and current amplifier
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Specified Otherwise)
DESCRIPTION SYMBOL VALUE UNITS
VCBO
Collector Base Volt 1.22. csc1008_csa708.pdf
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS CSC1008 NPN
CSA708 PNP
TO-92
CBE
Low Frequency Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage VCBO 80 V
Collector -Emitter Voltage VCEO 60 V
Emitter -Base Voltage VEBO 8.0 1.23. 2sc1008.pdf
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DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.
TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189
TO-92 Plastic-Encapsulate Transistors
2SC1008 TRANSISTOR(NPN )
TO92
FEATURES
1.EMITTER
Power dissipation
PCM : 0.8 W(Tamb=25?)
2. BASE
Collector current
3. COLLECTOR
ICM : 0.7 A
Collector-base voltage
1 2 3
V(BR)CBO : 80 V
Operating and storage junct 1.24. ktc1003.pdf
SEMICONDUCTOR KTC1003
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
B/W TV HORIZONTAL DEFLECTION
OUTPUT APPLICATION.
A
C
DIM MILLIMETERS
S
_
FEATURES A 10.0 + 0.3
_
+
B 15.0 0.3
E
Large Collector Current Capability. C _
2.70 0.3
+
D 0.76+0.09/-0.05
Large Collector Power Dissipation Capability.
_
E ?3.2 0.2
+
_
F 3.0 0.3
+
_
12.0 0.3
G +
H 0.5+0.1/-0.05
_
+
J 13.6 1.25. ktc1008.pdf
SEMICONDUCTOR KTC1008
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
VOLTAGE REGULATOR, RELAY,
RAMP DRIVER, INDUSTRIAL USE
B C
FEATURES
High Voltage : VCEO=60V(Min.).
High Current : IC(Max.)=1A.
N DIM MILLIMETERS
High Transition Frequency : fT=150MHz(Typ.).
A 4.70 MAX
E
K
B 4.80 MAX
Wide Area of Safe Operation. G
C 3.70 MAX
D
Complementary to KTA708.
D 0.45
E 1.00
F 1.27 1.26. ktc1006.pdf
SEMICONDUCTOR KTC1006
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
CB TRANSCEIVER TX DRIVER APPLICATION.
B D
FEATURES
Recommended for Driver Stage Application of
AM 4W Transmitter.
DIM MILLIMETERS
P
High Power Gain.
DEPTH:0.2
A 7.20 MAX
Wide Area of Safe Operation. B 5.20 MAX
C
C 0.60 MAX
S
D 2.50 MAX
Q
E 1.15 MAX
K
F 1.27
G 1.70 MAX
H 0.55 MAX
FF
MAXIMUM RATINGS (Ta=2 1.27. mpmc100b120rh.pdf
MPMC100B120RH
NPT & Rugged Type 1200V IGBT Module
General Description
Features
MagnaChip’s IGBT Module 7DM-2 package
BV = 1200V
CES
Low Conduction Loss : V = 2.8V (typ.)
CE(sat)
devices are optimized to reduce losses and
Fast & Soft Anti-Parallel FWD
switching noise in high frequency power Short circuit rated : Min. 10us at TC=100℃
Isolation Type 1.28. sigc100t65r3e.pdf
SIGC100T65R3E
IGBT3 Chip
Features: Recommended for:
• 650V Trench & Field Stop technology • power modules
• low VCE(sat) C
• low turn-off losses
Applications:
• short tail current
• drives
• positive temperature coefficient
• easy paralleling
G
E
• Qualified according to JEDEC for target
applications
Chip Type VCE ICn1 ) Die Size Package
SIGC100T65R 1.29. sigc100t60r3.pdf
SIGC100T60R3E
IGBT3 Chip
Features: This chip is used for:
• 600V Trench & Field Stop technology • power module
C
• low VCE(sat)
• low turn-off losses
Applications:
• short tail current
• drives
• positive temperature coefficient
G
• easy paralleling
E
Chip Type VCE IC Die Size Package
SIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil
Mechanical Par 1.30. sigc100t60r3e.pdf
SIGC100T60R3E
IGBT3 Chip
Features: This chip is used for:
• 600V Trench & Field Stop technology • power module
C
• low VCE(sat)
• low turn-off losses
Applications:
• short tail current
• drives
• positive temperature coefficient
G
• easy paralleling
E
Chip Type VCE IC Die Size Package
SIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil
Mechanical Par 1.31. irgc100b60ub.pdf
PD - 94716
IRGC100B60UB
Die in Wafer Form
Features
600V
C
• GEN5 Non Punch Through (NPT) Technology
IC(nom)=100A
• Low VCE(on)
VCE(on) typ. = 2.8V
• 10µs Short Circuit Capability
• Square RBSOA @ IC(nom) @ 25°C
• Positive VCE(on) Temperature Coefficient
UPS IGBT
G
Benefits
Short Circuit Rated
• Benchmark Efficiency for UPS and Welding Applications
E
150mm Waf 1.32. irgc100b60kb.pdf
PD - 94618A
IRGC100B60KB
Die in Wafer Form
Features
600V
C
• GEN5 Non Punch Through (NPT) Technology
IC(nom)=100A
• Low VCE(on)
VCE(on) typ.=1.9V @
• 10µs Short Circuit Capability
• Square RBSOA
IC(nom) @ 25°C
• Positive VCE(on) Temperature Coefficient
Motor Control IGBT
G
Benefits
Short Circuit Rated
• Benchmark Efficiency for Motor Control Applications
E
1.33. irgc100b120kb.pdf
1.34. igc100t65t8rm.pdf
IGC100T65T8RM
IGBT3 Chip Medium Power
Features: Recommended for:
650V Trench & Field Stop technology power modules
C
high short circuit capability, self limiting
short circuit current
positive temperature coefficient Applications:
easy paralleling drives
G
Qualified according to JEDEC for target
E
applications
Chip Type VCE ICn Die Size Package
IGC100T6 1.35. irgc100b120ub.pdf
PD - 93873B
IRGC100B120UB
Die in Wafer Form
1200V
Features
C
• GEN5 Non Punch Through (NPT) Technology
IC(nom)= 100A
• Low VCE(on)
VCE(on) typ.= 3.1V @
• 10µs Short Circuit Capability
IC(nom) @ 25°C
• Square RBSOA
• Positive VCE(on) Temperature Coefficient UltraFast IGBT
G
Benefits
Short Circuit Rated
E
• Benchmark Efficiency above 20KHz
150mm Wafer
• 1.36. 2sc1008.pdf
WEITRON
2SC1008
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
MAXIMUM RATINGS (T unless otherwise noted)
A=25°C
Parameter Symbol Value Units
Collector-Base Voltage V
VCBO 80
A
Collector Current ICM 0.7
Power Dissipation PCM 0.8 W
-55 to +150
Junction Temperature TJ °C
-55 to +150
Tstg
Storage Temperature °C
ELECTRICAL CHARACTERIS 1.37. ftc1008.pdf
SEMICONDUCTOR
FTC1008
TECHNICAL DATA
TO – 92
FTC1008 TRANSISTOR (NPN)
1. EMITTER
2. BASE
FEATURES
3. COLLECTOR
General Purpose Switching and Amplification
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 8 V
IC Collector Current 700 mA
PC Col 1.38. 2sc1009.pdf
SMD Type Transistors
NPN Transistors
2SC1009
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=50mA
● Collector Emitter Voltage VCEO=30V 1 2
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector - Base Voltage VCBO 50
Collecto Size:654K _infineon
Size:585K _infineon
Size:689K _infineon
Size:215K _onsemi
Size:78K _secos
Size:119K _isahaya
Size:188K _cdil
Size:82K _cdil
Size:217K _cdil
Size:352K _hua-yuan
Size:449K _kec
Size:74K _kec
Size:73K _kec
Size:1188K _igbt
Size:128K _igbt
Size:127K _igbt
Size:127K _igbt
Size:34K _igbt_a
Size:79K _igbt_a
Size:43K _igbt_a
Size:78K _igbt_a
Size:94K _igbt_a
Size:346K _wietron
Size:172K _first_silicon
Size:1663K _kexin
Datasheet: BUYP54 , BVW90 , BVX18A , C055 , C055P , C066 , C066P , C1 , BF494 , C1001 , C1002 , C1003 , C1004 , C101 , C102 , C103 , C106 .
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