DMC1028UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max Device BVDSS RDS(ON) max TA = +25C Low Input Capacitance 25m @ VGS = 4.5V 6.0A Low Profile, 0.6mm Max Height Q1 12V 30m @ VGS = 3.3V 5.5A ESD HBM Protected up to 1.5KV, MM Protected up to 150V. N-Channel 32m @ VGS = 2.5V 5.3A Totally Lea

DMC1029UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max TA = +25 Low Input Capacitance C 29m @ VGS = 4.5V 5.6A Low Profile, 0.6mm Max Height Q1 34m @ VGS = 2.5V 5.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V N-Channel 44m @ VGS = 1.8V 4.5A Haloge

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1027 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute

SEMICONDUCTOR KTC1027TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. B DFEATURE Complementary to KTA1023.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHA RACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBOCollector-Base Voltage 120 VH 0.55 MAXFF_J 14.00 + 0.50V

SEMICONDUCTOR KTC1020TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BFEATURES Excellecnt hFE Linearity: hFE(2)=25Min. : VCE=6V, IC=400mA.DIM MILLIMETERSOA 3.20 MAX 1 Watt Amplifier Application.HM B 4.30 MAXC 0.55 MAX Complementary to KTA1021. _D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60 MAXJ

SEMICONDUCTOR KRC101S~KRC106STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURES DIM MILLIMETERSWith Built-in Bias Resistors. _+A 2.93 0.20B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/

SEMICONDUCTOR KTC1026TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION.B DFEATURES High Voltage : VCEO=180V.DIM MILLIMETERSP High DC Current Gain.DEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXMAXIMUM RATINGS (Ta=25 )H 0.55 MAXFF_J 14.00 + 0.50CHAR

KTC1027WEITRONNPN TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASETO-92LMAXIMUM RATINGS (TA=25 unless otherwise noted)valueParameter Symbol UnitsCollector-Base Voltage VCBO 120 V 120 VCollector-Emitter Voltage VCEO 5 VEmitter-Base Voltage VEBO 0.8 ACollector Current -Continuous ICCollector Power Dissipation PC 0.75 WRJAThermal Resistance From

KTC1027 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features KTA1023 Complementary pair with KTA1023. / Applications High voltage application. / Equivalent Circuit / Pinning 1 2 3 PIN

SEMICONDUCTORFTA1027TECHNICAL DATAFTC1027 TRANSISTOR (NPN) BFEATURES Complementary to FTA1023 High Voltage Applications EDIM MILLIMETERSA 8.2 MAXDMAXIMUM RATINGS (Ta=25 unless otherwise noted) B 5.1 MAXC 1.58 MAXD 0.55 MAXE 0.7 TYP F 1.27 TYPG 2.54 TYPFH 14.20 MAX MAXIMUM RATINGS (Ta=25 unless otherwise noted) GJ 0.45 MAX L 4.10 MAX Symbol

DIP Type TransistorsNPN TransistorsKTC1020TO-92M Unit:mm6.0 0.2 Features1.0 0.1 Excelent hFE Linearity 1 Watt Amplifier Application0.50 0.1 Complementary to KTA102121 31.50 3.0 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35

MMBTRC101SS ... MMBTRC106SSMMBTRC101SS ... MMBTRC106SSSurface Mount Bias Resistor TransistorsNPN NPNSMD Transistoren mit EingangsspannungsteilerVersion 2011-02-10Power dissipation Verlustleistung 200 mW 0.11.1 2.9Plastic case SOT-230.4 3Kunststoffgehuse (TO-236)TypeWeight approx. Gewicht ca. 0.01 gCode1 2Plastic material has UL classification 94V-

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1024DESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 50V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SC1027DESCRIPTIONWith TO-3 packageHigh power dissipationLow collector saturation voltagMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertorGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-