All Transistors. C102 Datasheet

 

C102 Datasheet, Equivalent, Cross Reference Search

Type Designator: C102

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 0.8 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 13

Noise Figure, dB: -

Package: TO5

C102 Transistor Equivalent Substitute - Cross-Reference Search

 

C102 Datasheet (PDF)

1.1. mmbtrc101ss mmbtrc102ss mmbtrc103ss mmbtrc104ss mmbtrc105ss mmbtrc106ss.pdf Size:106K _upd

C102
C102

MMBTRC101SS ... MMBTRC106SS MMBTRC101SS ... MMBTRC106SS Surface Mount Bias Resistor Transistors NPN NPN SMD Transistoren mit Eingangsspannungsteiler Version 2011-02-10 Power dissipation – Verlustleistung 200 mW ±0.1 1.1 2.9 Plastic case SOT-23 0.4 3 Kunststoffgehäuse (TO-236) Type Weight approx. – Gewicht ca. 0.01 g Code 1 2 Plastic material has UL classification 94V-

1.2. dmc1028ufdb.pdf Size:589K _update-mosfet

C102
C102

DMC1028UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features  Low On-Resistance ID max Device BVDSS RDS(ON) max TA = +25°C  Low Input Capacitance 25mΩ @ VGS = 4.5V 6.0A  Low Profile, 0.6mm Max Height Q1 12V 30mΩ @ VGS = 3.3V 5.5A  ESD HBM Protected up to 1.5KV, MM Protected up to 150V. N-Channel 32mΩ @ VGS = 2.5V 5.3A  Totally Lea

 1.3. dmc1029ufdb.pdf Size:307K _update-mosfet

C102
C102

DMC1029UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features  Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max TA = +25°  Low Input Capacitance C 29mΩ @ VGS = 4.5V 5.6A  Low Profile, 0.6mm Max Height Q1 34mΩ @ VGS = 2.5V 5.1A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V N-Channel 44mΩ @ VGS = 1.8V 4.5A  Haloge

1.4. 2sc1027.pdf Size:160K _jmnic

C102
C102

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1027 DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute ma

 1.5. ktc1020.pdf Size:72K _kec

C102
C102

SEMICONDUCTOR KTC1020 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES Excellecnt hFE Linearity : hFE(2)=25Min. : VCE=6V, IC=400mA. DIM MILLIMETERS O A 3.20 MAX 1 Watt Amplifier Application. H M B 4.30 MAX C 0.55 MAX Complementary to KTA1021. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60 MAX J

1.6. ktc1026.pdf Size:89K _kec

C102
C102

SEMICONDUCTOR KTC1026 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION. B D FEATURES High Voltage : VCEO=180V. DIM MILLIMETERS P High DC Current Gain. DEPTH:0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX MAXIMUM RATINGS (Ta=25 ) H 0.55 MAX FF _ J 14.00 + 0.50 CHAR

1.7. ktc1027.pdf Size:79K _kec

C102
C102

SEMICONDUCTOR KTC1027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURE Complementary to KTA1023. DIM MILLIMETERS P DEPTH:0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHA RACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO Collector-Base Voltage 120 V H 0.55 MAX FF _ J 14.00 + 0.50 V

1.8. 2sc1024.pdf Size:181K _inchange_semiconductor

C102
C102

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1024 DESCRIPTION ·DC Current Gain -h = 25(Min)@ I = 1.0A FE C ·Collector-Emitter Sustaining Voltage- : V = 50V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM R

1.9. 2sc1027.pdf Size:208K _inchange_semiconductor

C102
C102

isc Silicon NPN Power Transistor 2SC1027 DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltag ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-

1.10. ktc1027.pdf Size:45K _wietron

C102
C102

KTC1027 WEITRON NPN Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92L MAXIMUM RATINGS (TA=25? unless otherwise noted) value Parameter Symbol Units Collector-Base Voltage VCBO 120 V 120 V Collector-Emitter Voltage VCEO 5 V Emitter-Base Voltage VEBO 0.8 A Collector Current -Continuous IC Collector Power Dissipation PC 0.75 W R?JA Thermal Resistance From Junct

1.11. ftc1027.pdf Size:329K _first_silicon

C102
C102

SEMICONDUCTOR FTA1027 TECHNICAL DATA FTC1027 TRANSISTOR (NPN) B FEATURES Complementary to FTA1023 High Voltage Applications E DIM MILLIMETERS A 8.2 MAX D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) B 5.1 MAX C 1.58 MAX D 0.55 MAX E 0.7 TYP F 1.27 TYP G 2.54 TYP F H 14.20 MAX MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) G J 0.45 MAX L 4.10 MAX Symbol

1.12. ktc1020.pdf Size:1002K _kexin

C102
C102

DIP Type Transistors NPN Transistors KTC1020 TO-92M Unit:mm 6.0 ± 0.2 ■ Features 1.0 ±0.1 ● Excelent hFE Linearity ● 1 Watt Amplifier Application 0.50 ±0.1 ● Complementary to KTA1021 2 1 3 1.50 3.0 ±0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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