STD150N3LLH6STP150N3LLH6, STU150N3LLH6N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220STripFET VI DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max IDSTD150N3LLH6 30 V 0.0028 80 A 332STP150N3LLH6 30 V 0.0033 80 A11STu150N3LLH6 30 V 0.0033 80 AIPAKDPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)32 Hi

STD150NH02L-1STD150NH02LN-channel 24V - 0.003 - 150A - ClipPAK - IPAKSTripFET IlI Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD150NH02L 24V

STD150NH02L-1STD150NH02LN-channel 24V - 0.003 - 150A - ClipPAK - IPAKSTripFET IlI Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD150NH02L 24V

TTD1509B NPN ()TTD1509BTTD1509BTTD1509BTTD1509B1. 1. 1. 1. 2. 2. 2. 2. (1)

Data Sheet4V Drive Nch MOSFET RSD150N06Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationsSwitchingPackaging specifications Inner ci

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD150N06FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationsSwitchingPackaging spec

Technische Information / Technical InformationIGBT-ModuleFD150R12RT4IGBT-modules34mm Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode34mm module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hoh

MII 150-12 A4 MID 150-12 A4MDI 150-12 A4IC25 = 180 AIGBT ModulesVCES = 1200 VVCE(sat) typ. = 2.2 VShort Circuit SOA CapabilitySquare RBSOA3MII MID MDI2113 3 3110988 81 1 19 911 112 2 21010E 72873FeaturesSymbol Conditions Maximum RatingsNPT IGBT technologylow saturation voltageVCES TJ = 25C to 150C 1200 Vlow switching lossesVCGR T

LND150N-Channel Depletion-ModeDMOS FETFeatures General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND1

2SD1504Silicon NPN EpitaxialApplicationLow frequency amplifier, MutingOutlineSPAK1. Emitter122. Collector33. Base2SD1504Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 5VCollector current IC 0.5 ACollector peak current ic (peak) 1.0 ACollect

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORCSD1506TO126 Plastic PackageECBComplementary CSB1065Low Frequency Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage(open emitter) >60 VCollector Emitter Voltage (open b

PD1503YVSDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15.8m @VGS = 10VQ2 30V 9A21.0m @VGS = 10VQ1 30V 8ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSDrain-Source Voltage VDS 30 30VGate-Source Voltage VGS 20 20TA = 25 C9 8IDContinuous Drain Current2TA =

PD1503YVS-ADual N- Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15.5m @VGS = 10VQ2 30V 9A18m @VGS = 10VQ1 30V 8ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSVDSDrain-Source Voltage 30 30 VVGSGate-Source Voltage 20 20 VTA = 25 C9 8IDContinuous Drain CurrentTA

PD1503BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 15m @VGS = 10V 12ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C12IDContinuous Drain CurrentTA = 70 C9AIDM50Pulsed Drain Current1IASAvalanche Current 28EAS

FHD150 NPN B C D E F G PCM Tc=25 150 W ICM 15 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=2mA 50 100 150 200 250 300 V V(BR)CEO ICE=2mA 50 100 150 200 250 300 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA VBEsat 3.0 V

DSD150N10L3&DSB150N10L3 100V/12m/60A N-MOSFET Features Key ParametersVDS Low on resistance 100VRDS(on)typ. Low reverse transfer capacitances 12mID 100% single pulse avalanche energy test 60ACiss@10V 100% VDS test 2320pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 7nCApplications Motor Control and Drive Charge/Discharge for Battery M

MDD1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6mGeneral Description Features The MDD1501 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 67.4A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1501 is suitable device for DC to DC

MDD1504 Single N-channel Trench MOSFET 30V, 31.5A, 12.7m Features General Description The MDD1504 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 31.5A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1504 is suitable device for DC to DC

MPMD150B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-3 package BV = 1200V CES Low Conduction Loss : V = 2.8V (typ.) CE(sat)devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at TC=100 Isolation Typ

MDD1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5mGeneral Description Features The MDD1502 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 45.7A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1502 is suitable device for DC to DC

MDD1503 Single N-channel Trench MOSFET 30V, 87.5A, 4.7m Features General Description The MDD1503 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 87.5A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1503 is suitable device for DC to DC

N N-CHANNEL MOSFET FHD150N03B MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 30 V Crss ( 405pF) Low Crss (typical 405pF ) Rdson-typ @Vgs=10V 2.2m Fast switching Rdson-typ @Vgs=4.5V 2.8m 100% 100% avalanche tested Qg-typ

N N-CHANNEL MOSFET FHP150N03A/FHS150N03A/FHD150N03A MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 30V Crss ( 314pF) Low Crss (typical 314pF ) Rdson-typ @Vgs=10V 2.5m Fast switching Rdson-typ @Vgs=4.5V 3.2m 100% 100% avalanc

Mar 2016BVDSS = 100 VRDS(on) typ =13 HRLD150N10K / HRLU150N10K ID = 70 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD150N10K HRLU150N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(O

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD150PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class: JP, JT, JC

HTD150P06 P-160V P-Ch Power MOSFET-60 VVDSFeature12RDS(on),typ VGS=-10V m High Speed Power Switching, Logic Level15RDS(on),typ VGS=-4.5V m Enhanced Avalanche Ruggedness-40 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorTO-252Drain2Gate31Part Number Pac

isc Product Specificationisc Silicon NPN Power Transistor 2SD1503DESCRIPTION High Collector-Base Voltage -: V = 900V(Min)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for power amplifier and power switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SD1506DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1065Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Darlington Power Transistor 2SD1500DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 10AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =2

isc Silicon NPN Power Transistor 2SD1505DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1064Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Darlington Power Transistor 2SD1509DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I =1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp