2N3718 datasheet, аналоги, основные параметры
Наименование производителя: 2N3718 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hFE): 2
Корпус транзистора: TO31
📄📄 Копировать
Аналоги (замена) для 2N3718
- подборⓘ биполярного транзистора по параметрам
2N3718 даташит
9.2. Size:272K motorola
2n3715 2n3716.pdf 
Order this document MOTOROLA by 2N3715/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 Silicon NPN Power Transistors 2N3716 . . . designed for medium speed switching and amplifier applications. These devices feature Total Switching Time at 3 A typically 1.15 s 10 AMPERE Gain Ranges Specified at 1 A and 3 A POWER TRANSISTORS Low VCE(sat) typically 0.5 V at IC = 5 A and
9.3. Size:82K central
2n3707 2n3708 2n3709 2n3710 2n3711.pdf 
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com
9.5. Size:172K comset
2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf 
2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Rat
9.7. Size:10K semelab
2n3716x.pdf 
"2N3716X" 2N3716X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed produ
9.8. Size:10K semelab
2n3714smd.pdf 
2N3714SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (
9.9. Size:11K semelab
2n3715x.pdf 
2N3715X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
9.10. Size:10K semelab
2n3713smd.pdf 
2N3713SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (
9.11. Size:10K semelab
2n3716smd.pdf 
2N3716SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (
9.12. Size:10K semelab
2n3715smd.pdf 
2N3715SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (
9.14. Size:55K microsemi
2n3719.pdf 
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3719 APPLICATIONS High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES Collector-Emitter Sustaining Voltage Silicon PNP VCEO(SUS) = 40 Vdc (Min) - 2N3719 Power Transistors DC Current Gain hFE = 25-180 @ IC = 1.0 Adc Low Co
9.15. Size:174K aeroflex
2n3715 2n3716.pdf 
NPN Power Silicon Transistor 2N3715 & 2N3716 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/408 TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N3715 2N3716 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 80 100 Vdc Emitter - Base Voltage VEBO 7.0 Vdc Base Current IB 4.0 Adc Collector Current IC 10 Adc Total Power Diss
9.18. Size:116K inchange semiconductor
2n3716.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3716 DESCRIPTION With TO-3 package APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO
9.19. Size:38K inchange semiconductor
2n3715 2n3716.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N3715/3716 DESCRIPTION DC Current Gain- hFE= 50-150@IC= 1A Wide Area of Safe Operation Low Collector Saturation Voltage- VCE(sat)= 0.8V(Max.)@ IC= 5A Complement to Type 2N3791/3792 APPLICATIONS Designed for medium-speed switching and amplifier applications ABSOLUTE MAXIMU
9.20. Size:183K inchange semiconductor
2n3714.pdf 
isc Silicon NPN Power Transistor 2N3714 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C
9.21. Size:183K inchange semiconductor
2n3713.pdf 
isc Silicon NPN Power Transistor 2N3713 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C
Другие транзисторы: 2N3714SM, 2N3715, 2N3715HS, 2N3715SM, 2N3716, 2N3716HS, 2N3716SM, 2N3717, 2N2222, 2N3719, 2N372, 2N3720, 2N3721, 2N3722, 2N3723, 2N372-33, 2N3724
