2N3718 Datasheet and Replacement

   Type Designator: 2N3718
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 2
   Noise Figure, dB: -
   Package: TO31

2N3718 Substitution

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2N3718 Datasheet (PDF)

9.1. Size:162K rca
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9.2. Size:272K motorola
2n3715 2n3716.pdf pdf_icon

Order this documentMOTOROLAby 2N3715/DSEMICONDUCTOR TECHNICAL DATANPN2N3715Silicon NPN Power Transistors2N3716. . . designed for mediumspeed switching and amplifier applications. These devicesfeature: Total Switching Time at 3 A typically 1.15 s10 AMPERE Gain Ranges Specified at 1 A and 3 APOWER TRANSISTORS Low VCE(sat): typically 0.5 V at IC = 5 A and

9.3. Size:82K central
2n3707 2n3708 2n3709 2n3710 2n3711.pdf pdf_icon

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

9.4. Size:88K central
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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.5. Size:172K comset
2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf pdf_icon

2N3713/2N3714/2N3715/2N3716 - NPN2N3789/2N3790/2N3791/2N3792 - PNPEPITAXIAL-BASE NPN - PNPThe 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPNpower transistor in Jedec TO-3 metal case. They are inteded for use in powerlinear and switching applications. The complementary PNPtypes are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.ABSOLUTE MAXIMUM RATINGSSymbol Rat

9.6. Size:125K mospec
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AAA

9.7. Size:10K semelab
2n3716x.pdf pdf_icon

"2N3716X"2N3716XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed produ

9.8. Size:10K semelab
2n3714smd.pdf pdf_icon

2N3714SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

9.9. Size:11K semelab
2n3715x.pdf pdf_icon

2N3715XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

9.10. Size:10K semelab
2n3713smd.pdf pdf_icon

2N3713SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

9.11. Size:10K semelab
2n3716smd.pdf pdf_icon

2N3716SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

9.12. Size:10K semelab
2n3715smd.pdf pdf_icon

2N3715SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

9.13. Size:137K microelectronics
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9.14. Size:55K microsemi
2n3719.pdf pdf_icon

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3719APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency AmplifiersFEATURES: Collector-Emitter Sustaining Voltage: Silicon PNPVCEO(SUS) = 40 Vdc (Min) - 2N3719Power Transistors DC Current Gain:hFE = 25-180 @ IC = 1.0 Adc Low Co

9.15. Size:174K aeroflex
2n3715 2n3716.pdf pdf_icon

NPN Power Silicon Transistor2N3715 & 2N3716Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/408 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N3715 2N3716 UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base Voltage VCBO 80 100 VdcEmitter - Base Voltage VEBO 7.0 VdcBase Current IB 4.0 AdcCollector Current IC 10 AdcTotal Power Diss

9.16. Size:1285K sprague
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9.18. Size:116K inchange semiconductor
2n3716.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3716 DESCRIPTION With TO-3 package APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

9.19. Size:38K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N3715/3716 DESCRIPTION DC Current Gain- : hFE= 50-150@IC= 1A Wide Area of Safe Operation Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A Complement to Type 2N3791/3792 APPLICATIONS Designed for medium-speed switching and amplifier applications ABSOLUTE MAXIMU

9.20. Size:183K inchange semiconductor
2n3714.pdf pdf_icon

isc Silicon NPN Power Transistor 2N3714DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for medium-speed switching andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

9.21. Size:183K inchange semiconductor
2n3713.pdf pdf_icon

isc Silicon NPN Power Transistor 2N3713DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for medium-speed switching andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

Datasheet: 2N3714SM , 2N3715 , 2N3715HS , 2N3715SM , 2N3716 , 2N3716HS , 2N3716SM , 2N3717 , C1815 , 2N3719 , 2N372 , 2N3720 , 2N3721 , 2N3722 , 2N3723 , 2N372-33 , 2N3724 .