Справочник транзисторов. 2N3739

 

Биполярный транзистор 2N3739 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N3739
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 325 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Ёмкость коллекторного перехода (Cc): 20 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO66

 Аналоги (замена) для 2N3739

 

 

2N3739 Datasheet (PDF)

 9.2. Size:17K  semelab
2n3738.pdf

2N3739
2N3739

2N3738MECHANICAL DATAPOWER TRANSISTORSDimensions in mmNPN SILICON6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.1 2FEATURES Hermetically Packaged. Low Saturation Voltage High Gain1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Package (TO-213AA)Pin 1 = Base Pin 2 = Emitter Case = CollectorA

 9.3. Size:18K  semelab
2n3735csm4.pdf

2N3739
2N3739

2N3735CSM4Medium Current NPN Silicon AnnularTransistors Designed for High-SpeedSwitching and Driver Applications in aCeramic Surface Mount PackageMECHANICAL DATADimensions in mm (inches)1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)FEATURES0.23rad.(0.009) High Voltage3 2 Ceramic Surface Mount Package0.234 1min

 9.4. Size:11K  semelab
2n3734.pdf

2N3739

2N3734Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 1.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

 9.5. Size:178K  microsemi
2n3735l.pdf

2N3739
2N3739

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN2N3737 2N3737UB JANTXJANTXVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol M

 9.6. Size:178K  microsemi
2n3737ub.pdf

2N3739
2N3739

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN2N3737 2N3737UB JANTXJANTXVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol M

 9.7. Size:609K  microsemi
2n3375 2n3632 2n3733.pdf

2N3739
2N3739

 9.8. Size:210K  semicoa
2n3737.pdf

2N3739
2N3739

2N3737Silicon NPN TransistorData SheetDescription Applications General purpose Low power Semicoa Semiconductors offers: NPN silicon transistor Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N3737J) JANTX level (2N3737JX) JANTXV level (2N3737JV) JANS level (2N3737JS) QCI to the applicable level 100% die visual

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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