2N3739 Datasheet. Specs and Replacement
Type Designator: 2N3739 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 325 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO66
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2N3739 datasheet
2N3738 MECHANICAL DATA POWER TRANSISTORS Dimensions in mm NPN SILICON 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. 1 2 FEATURES Hermetically Packaged. Low Saturation Voltage High Gain 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 Package (TO-213AA) Pin 1 = Base Pin 2 = Emitter Case = Collector A... See More ⇒
2N3735CSM4 Medium Current NPN Silicon Annular Transistors Designed for High-Speed Switching and Driver Applications in a Ceramic Surface Mount Package MECHANICAL DATA Dimensions in mm (inches) 1.40 0.15 5.59 0.13 (0.055 0.006) (0.22 0.005) 0.25 0.03 (0.01 0.001) FEATURES 0.23 rad. (0.009) High Voltage 3 2 Ceramic Surface Mount Package 0.23 4 1 min... See More ⇒
2N3734 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 1.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 ... See More ⇒
Detailed specifications: 2N3734S, 2N3735, 2N3735S, 2N3736, 2N3736A, 2N3737, 2N3737A, 2N3738, S8550, 2N374, 2N3740, 2N3740A, 2N3740AR, 2N3741, 2N3741A, 2N3741R, 2N3742
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BJT Parameters and How They Relate
History: 2N3742 | 2N358A | 2N5714 | BFX93A | BFX59 | 2N5665SM | 2N3586
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