2N386 datasheet, аналоги, основные параметры
Наименование производителя: 2N386 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 12 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 100 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.12 MHz
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO27
📄📄 Копировать
Аналоги (замена) для 2N386
- подборⓘ биполярного транзистора по параметрам
2N386 даташит
0.1. Size:45K philips
2n3866 2n4427.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors 1995 Oct 27 Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3866; 2N4427 overlay transistors DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal packages wi
0.2. Size:522K central
2n3866 series.pdf 
2N3866 2N3866A www.centralsemi.com NPN SILICON DESCRIPTION HIGH FREQUENCY TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS (TA=25 C unless otherwise noted) SYMBOL UNITS Collec
0.3. Size:1098K no
2n3868s.pdf 
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is
0.4. Size:1098K no
2n3867u4.pdf 
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is
0.5. Size:1098K no
2n3867s.pdf 
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is
0.6. Size:1098K no
2n3868u4.pdf 
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is
0.8. Size:10K semelab
2n3868smd05.pdf 
2N3868SMD05 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 60V IC = 1A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab herm
0.9. Size:10K semelab
2n3868smd.pdf 
2N3868SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 60V IC = 1A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0
0.10. Size:153K cdil
2n3868.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3868 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 60 V VCBO Collector Base Voltage 60 V VEBO
0.11. Size:123K cdil
2n3867.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 40 V VEBO
0.12. Size:136K microsemi
2n3866ub.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN SILICON HIGH-FREQUENCY TRANSISTOR Qualified per MIL-PRF-19500/398 DEVICES LEVELS 2N3866 2N3866UB JAN 2N3866A 2N3866AUB JANTX JANTX
0.13. Size:56K microsemi
2n3868.pdf 
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3868 APPLICATIONS High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES Silicon PNP Power Collector-Emitter Sustaining Voltage VCEO(sus) = - 60 Vdc (Min) Transistors DC Current Gain hFE = 30-150 @ IC = 1.5 Adc Low Collector-
0.14. Size:331K microsemi
2n3866.pdf 
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 1. Emitter 800 MHz Current-Gain Bandwidth Produ
0.15. Size:56K microsemi
2n3867.pdf 
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3867 APPLICATIONS High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES Silicon PNP Power Collector-Emitter Sustaining Voltage VCEO(sus) = - 40 Vdc (Min) Transistors DC Current Gain hFE = 40-200 @ IC = 1.5 Adc Low Collector-
0.16. Size:108K china
3da3866 2n3866.pdf 
3DA3866(2N3866) NPN PCM Ta=25 5 W ICM 0.4 A Tjm 175 Tstg -55 150 V(BR)CBO IC=0.1mA 55 V V(BR)CEO IC=5.0mA 30 V V(BR)EBO IE=0.1mA 3.5 V ICEO VCE=28V 20 A IC=100mA VCEsat 1 V IB=20mA VCE=5V hFE 25 IC=50m A VCE=15V
0.18. Size:182K inchange semiconductor
2n3865.pdf 
isc Silicon NPN Power Transistor 2N3865 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C
0.19. Size:181K inchange semiconductor
2n3863.pdf 
isc Silicon NPN Power Transistor 2N3863 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C
0.20. Size:182K inchange semiconductor
2n3864.pdf 
isc Silicon NPN Power Transistor 2N3864 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C
Другие транзисторы: 2N3856, 2N3856A, 2N3857, 2N3858, 2N3858A, 2N3859, 2N3859A, 2N385A, 2N3904, 2N3860, 2N3860A, 2N3861, 2N3862, 2N3863, 2N3864, 2N3865, 2N3866
