All Transistors. 2N386 Datasheet

 

2N386 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N386

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 100 °C

Transition Frequency (ft): 0.12 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO27

2N386 Transistor Equivalent Substitute - Cross-Reference Search

 

2N386 Datasheet (PDF)

1.1. 3da3866 2n3866.pdf Size:108K _update

2N386

3DA3866(2N3866)型 NPN 硅高频大功率晶体管 参数符号 测试条件 规范值 单位 PCM Ta=25℃ 5 W 极 ICM 0.4 A 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO IC=0.1mA ≥55 V V(BR)CEO IC=5.0mA ≥30 V V(BR)EBO IE=0.1mA ≥3.5 V 直 ICEO VCE=28V ≤20 μA 流 参 IC=100mA VCEsat ≤1 V 数 IB=20mA VCE=5V hFE ≥25 IC=50m A 交 VCE=15V 流

1.2. 2n3868smd05.pdf Size:10K _upd

2N386

2N3868SMD05 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 60V IC = 1A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab herm

 1.3. 2n3868s.pdf Size:1098K _upd

2N386
2N386

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

1.4. 2n3868u4.pdf Size:1098K _upd

2N386
2N386

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

 1.5. 2n3867smd05.pdf Size:337K _upd

2N386
2N386

PNP SWITCHING SILICON TRANSISTOR 2N3867SMD05 • High Voltage • Hermetic Ceramic Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 40V VCEO Collector – Emitter Voltage 40V VEBO Emitter

1.6. 2n3867s.pdf Size:1098K _upd

2N386
2N386

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

1.7. 2n3867u4.pdf Size:1098K _upd

2N386
2N386

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

1.8. 2n3868smd.pdf Size:10K _upd

2N386

2N3868SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 60V IC = 1A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

1.9. 2n3866ub.pdf Size:136K _upd

2N386
2N386

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN SILICON HIGH-FREQUENCY TRANSISTOR Qualified per MIL-PRF-19500/398 DEVICES LEVELS 2N3866 2N3866UB JAN 2N3866A 2N3866AUB JANTX JANTX

1.10. 2n3866 2n4427.pdf Size:45K _philips

2N386
2N386

DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors 1995 Oct 27 Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3866; 2N4427 overlay transistors DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal packages with

1.11. 2n3866 series.pdf Size:522K _central

2N386
2N386

2N3866 2N3866A www.centralsemi.com NPN SILICON DESCRIPTION: HIGH FREQUENCY TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL UNITS Collector-

1.12. 2n3867.pdf Size:123K _cdil

2N386
2N386

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 40 V VEBO Em

1.13. 2n3868.pdf Size:153K _cdil

2N386
2N386

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3868 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 60 V VCBO Collector Base Voltage 60 V VEBO Em

1.14. 2n3867.pdf Size:56K _microsemi

2N386
2N386

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3867 APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: Silicon PNP Power Collector-Emitter Sustaining Voltage: VCEO(sus) = - 40 Vdc (Min) Transistors DC Current Gain: hFE = 40-200 @ IC = 1.5 Adc Low Collector-Emitter Saturat

1.15. 2n3868.pdf Size:56K _microsemi

2N386
2N386

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3868 APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: Silicon PNP Power Collector-Emitter Sustaining Voltage: VCEO(sus) = - 60 Vdc (Min) Transistors DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc Low Collector-Emitter Saturat

1.16. 2n3866.pdf Size:331K _microsemi

2N386
2N386

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 1. Emitter 800 MHz Current-Gain Bandwidth Product 2. Ba

Datasheet: 2N3856 , 2N3856A , 2N3857 , 2N3858 , 2N3858A , 2N3859 , 2N3859A , 2N385A , BC548 , 2N3860 , 2N3860A , 2N3861 , 2N3862 , 2N3863 , 2N3864 , 2N3865 , 2N3866 .

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