Справочник транзисторов. KTD1415

 

Биполярный транзистор KTD1415 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: KTD1415

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 30 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимальный постоянный ток коллектора (Ic): 7 A

Предельная температура PN-перехода (Tj): 175 °C

Статический коэффициент передачи тока (hfe): 2000

Корпус транзистора: ISO220

Аналоги (замена) для KTD1415

 

 

KTD1415 Datasheet (PDF)

1.1. ktd1415.pdf Size:455K _kec

KTD1415
KTD1415

SEMICONDUCTOR KTD1415 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 E FEATURES C _ 2.70 0.3 + D 0.76+0.09/-0.05 High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. _ E Φ3.2 0.2 + Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC

1.2. ktd1415v.pdf Size:455K _kec

KTD1415
KTD1415

SEMICONDUCTOR KTD1415V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR INDUSTRIAL USE. HIGH POWER SWITCHING APPLICATIONS. A C HAMMER DRIVER, PULSE MOTOR DRIVER DIM MILLIMETERS S APPLICATIONS. _ A 10.0 0.3 + _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 FEATURES _ E Φ3.2 0.2 + High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. _ F 3.0 0.3 + _ 12.0 0.3 G +

 4.1. ktd1411.pdf Size:384K _kec

KTD1415
KTD1415

SEMICONDUCTOR KTD1411 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A B D C FEATURES E High DC Current Gain : hFE=3000(Min.) F (VCE=2V, IC=1A) G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D Φ3.2 0.1 E 3.5 VCBO Collector-Base Voltage 80 V _ + F 11.0 0.3 G 2.9

4.2. ktd1414.pdf Size:449K _kec

KTD1415
KTD1415

SEMICONDUCTOR KTD1414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 E FEATURES C _ 2.70 0.3 + D 0.76+0.09/-0.05 High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=1A. _ E Φ3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 1

 4.3. ktd1413.pdf Size:444K _kec

KTD1415
KTD1415

SEMICONDUCTOR KTD1413 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 E FEATURES C _ 2.70 0.3 + D 0.76+0.09/-0.05 High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=3A. _ E Φ3.2 0.2 + Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC

4.4. ktd1414.pdf Size:212K _inchange_semiconductor

KTD1415
KTD1415

isc Silicon NPN Darlington Power Transistor KTD1414 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 80V(Min) (BR)CEO ·Collector-Emitter Saturation Voltage- : V = 1.5V(Max) @I = 3A CE(sat) C ·High DC Current Gain : h = 2000(Min) @ I = 1A, V = 2V FE C CE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applicati

Другие транзисторы... KTD1146 , KTD1302 , KTD1303 , KTD1304 , KTD1351 , KTD1352 , KTD1413 , KTD1414 , 2N5551 , KTD1937 , KTD2058 , KTD2059 , KTD2060 , KTD2061 , KTD2066 , KTD2092 , KTD2424 .

 

 
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