KTD1415 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTD1415
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: ISO220
KTD1415 Transistor Equivalent Substitute - Cross-Reference Search
KTD1415 Datasheet (PDF)
1.1. ktd1415.pdf 
Size:455K _kec
SEMICONDUCTOR KTD1415 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 E FEATURES C _ 2.70 0.3 + D 0.76+0.09/-0.05 High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. _ E Φ3.2 0.2 + Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC
1.2. ktd1415v.pdf Size:455K _kec
SEMICONDUCTOR KTD1415V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR INDUSTRIAL USE. HIGH POWER SWITCHING APPLICATIONS. A C HAMMER DRIVER, PULSE MOTOR DRIVER DIM MILLIMETERS S APPLICATIONS. _ A 10.0 0.3 + _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 FEATURES _ E Φ3.2 0.2 + High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. _ F 3.0 0.3 + _ 12.0 0.3 G +
4.1. ktd1411.pdf Size:384K _kec
SEMICONDUCTOR KTD1411 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A B D C FEATURES E High DC Current Gain : hFE=3000(Min.) F (VCE=2V, IC=1A) G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D Φ3.2 0.1 E 3.5 VCBO Collector-Base Voltage 80 V _ + F 11.0 0.3 G 2.9
4.2. ktd1414.pdf Size:449K _kec
SEMICONDUCTOR KTD1414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 E FEATURES C _ 2.70 0.3 + D 0.76+0.09/-0.05 High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=1A. _ E Φ3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 1
4.3. ktd1413.pdf Size:444K _kec
SEMICONDUCTOR KTD1413 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 E FEATURES C _ 2.70 0.3 + D 0.76+0.09/-0.05 High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=3A. _ E Φ3.2 0.2 + Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC
4.4. ktd1414.pdf Size:212K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor KTD1414 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 80V(Min) (BR)CEO ·Collector-Emitter Saturation Voltage- : V = 1.5V(Max) @I = 3A CE(sat) C ·High DC Current Gain : h = 2000(Min) @ I = 1A, V = 2V FE C CE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applicati
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
