MJ15004 datasheet, аналоги, основные параметры
Наименование производителя: MJ15004 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 200 W
Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 20 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 2 MHz
Ёмкость коллекторного перехода (Cc): 1000 pf
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TO3
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MJ15004 даташит
..1. Size:101K onsemi
mj15003 mj15004.pdf 
MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. http //onsemi.com Features 20 AMPERE High Safe Operating Area For Low Distortion Complementary Designs POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON These
..2. Size:205K inchange semiconductor
mj15004.pdf 
isc Silicon PNP Power Transistor MJ15004 DESCRIPTION High DC Current Gain- h = 25(Min)@I = -5A FE C Wide Area of Safe Operation Complement to Type MJ15003 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
0.1. Size:104K onsemi
mj15004g.pdf 
MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear http //onsemi.com applications. Features 20 AMPERE POWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary Designs COMPLEMENTARY SIL
8.1. Size:119K motorola
mj15003r.pdf 
Order this document MOTOROLA by MJ15003/D SEMICONDUCTOR TECHNICAL DATA NPN MJ15003* Complementary Silicon Power PNP MJ15004* Transistors The MJ15003 and MJ15004 are PowerBase power transistors designed for high *Motorola Preferred Device power audio, disk head positioners and other linear applications. High Safe Operating Area (100% Tested) 20 AMPERE 250 W @ 50 V POWER TRA
8.2. Size:165K motorola
mj15001r.pdf 
Order this document MOTOROLA by MJ15001/D SEMICONDUCTOR TECHNICAL DATA NPN MJ15001 Complementary Silicon Power PNP MJ15002 Transistors The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. High Safe Operating Area (100% Tested) 15 AMPERE 200 W @ 40 V POWER TRANSISTORS 50 W @ 100 V COMPLEMEN
8.3. Size:159K onsemi
mj15001 mj15002.pdf 
MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. http //onsemi.com Features 20 AMPERE High Safe Operating Area POWER TRANSISTORS For Low Distortion Complementary Designs COMPLEMENTARY SILICON High DC Current Gain Thes
8.4. Size:151K onsemi
mj15001g.pdf 
MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. http //onsemi.com Features 20 AMPERE High Safe Operating Area (100% Tested) - 5.0 A @ 40 V 0.5 A @ 100 V POWER TRANSISTORS For Low Distortion Complementary Designs COMPLEMENTARY
8.5. Size:104K onsemi
mj15003g.pdf 
MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear http //onsemi.com applications. Features 20 AMPERE POWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary Designs COMPLEMENTARY SIL
8.7. Size:165K cn sptech
mj15003.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJ15003 DESCRIPTION High DC Current Gain- h = 25(Min)@I = 5A FE C Wide Area of Safe Operation Complement to the PNP MJ15004 APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag
8.8. Size:205K inchange semiconductor
mj15002.pdf 
isc Silicon PNP Power Transistor MJ15002 DESCRIPTION High DC Current Gain Wide Area of Safe Operation Complement to the NPN MJ15001 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
8.9. Size:205K inchange semiconductor
mj15003.pdf 
isc Silicon NPN Power Transistor MJ15003 DESCRIPTION High DC Current Gain- h = 25(Min)@I = 5A FE C Wide Area of Safe Operation Complement to the PNP MJ15004 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.10. Size:205K inchange semiconductor
mj15001.pdf 
isc Silicon NPN Power Transistor MJ15001 DESCRIPTION High DC Current Gain Wide Area of Safe Operation Complement to the PNP MJ15002 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
Другие транзисторы: MJ13335, MJ14000, MJ14001, MJ14002, MJ14003, MJ15001, MJ15002, MJ15003, 2SD2012, MJ15011, MJ15012, MJ15015, MJ15016, MJ15018, MJ15019, MJ15020, MJ15021
