MJ15004
Datasheet and Replacement
Type Designator: MJ15004
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200
W
Maximum Collector-Base Voltage |Vcb|: 140
V
Maximum Collector-Emitter Voltage |Vce|: 140
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 20
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 2
MHz
Collector Capacitance (Cc): 1000
pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package:
TO3
- BJT Cross-Reference Search
MJ15004
Datasheet (PDF)
..1. Size:101K onsemi
mj15003 mj15004.pdf 

MJ15003 (NPN),MJ15004 (PNP)Complementary SiliconPower TransistorsThe MJ15003 and MJ15004 are power transistors designed for highpower audio, disk head positioners and other linear applications.http://onsemi.comFeatures20 AMPERE High Safe Operating Area For Low Distortion Complementary Designs POWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON These
..2. Size:205K inchange semiconductor
mj15004.pdf 

isc Silicon PNP Power Transistor MJ15004DESCRIPTIONHigh DC Current Gain-: h = 25(Min)@I = -5AFE CWide Area of Safe OperationComplement to Type MJ15003Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor high power audio,disk head positionersand other linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
0.1. Size:104K onsemi
mj15004g.pdf 

MJ15003 (NPN),MJ15004 (PNP)Complementary SiliconPower TransistorsThe MJ15003 and MJ15004 are PowerBaset power transistorsdesigned for high power audio, disk head positioners and other linearhttp://onsemi.comapplications.Features 20 AMPEREPOWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary DesignsCOMPLEMENTARY SIL
8.1. Size:119K motorola
mj15003r.pdf 

Order this documentMOTOROLAby MJ15003/DSEMICONDUCTOR TECHNICAL DATANPNMJ15003*Complementary Silicon PowerPNPMJ15004*TransistorsThe MJ15003 and MJ15004 are PowerBase power transistors designed for high*Motorola Preferred Devicepower audio, disk head positioners and other linear applications. High Safe Operating Area (100% Tested) 20 AMPERE250 W @ 50 V POWER TRA
8.2. Size:165K motorola
mj15001r.pdf 

Order this documentMOTOROLAby MJ15001/DSEMICONDUCTOR TECHNICAL DATANPNMJ15001Complementary Silicon PowerPNPMJ15002TransistorsThe MJ15001 and MJ15002 are EpiBase power transistors designed for highpower audio, disk head positioners and other linear applications. High Safe Operating Area (100% Tested) 15 AMPERE200 W @ 40 V POWER TRANSISTORS50 W @ 100 V COMPLEMEN
8.3. Size:159K onsemi
mj15001 mj15002.pdf 

MJ15001 (NPN),MJ15002 (PNP)Complementary SiliconPower TransistorsThe MJ15001 and MJ15002 are power transistors designed for highpower audio, disk head positioners and other linear applications.http://onsemi.comFeatures20 AMPERE High Safe Operating AreaPOWER TRANSISTORS For Low Distortion Complementary DesignsCOMPLEMENTARY SILICON High DC Current Gain Thes
8.4. Size:151K onsemi
mj15001g.pdf 

MJ15001 (NPN),MJ15002 (PNP)Complementary SiliconPower TransistorsThe MJ15001 and MJ15002 are power transistors designed for highpower audio, disk head positioners and other linear applications.http://onsemi.comFeatures20 AMPERE High Safe Operating Area (100% Tested) - 5.0 A @ 40 V0.5 A @ 100 VPOWER TRANSISTORS For Low Distortion Complementary DesignsCOMPLEMENTARY
8.5. Size:104K onsemi
mj15003g.pdf 

MJ15003 (NPN),MJ15004 (PNP)Complementary SiliconPower TransistorsThe MJ15003 and MJ15004 are PowerBaset power transistorsdesigned for high power audio, disk head positioners and other linearhttp://onsemi.comapplications.Features 20 AMPEREPOWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary DesignsCOMPLEMENTARY SIL
8.7. Size:165K cn sptech
mj15003.pdf 

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJ15003DESCRIPTIONHigh DC Current Gain-: h = 25(Min)@I = 5AFE CWide Area of Safe OperationComplement to the PNP MJ15004APPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
8.8. Size:205K inchange semiconductor
mj15002.pdf 

isc Silicon PNP Power Transistor MJ15002DESCRIPTIONHigh DC Current GainWide Area of Safe OperationComplement to the NPN MJ15001100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
8.9. Size:205K inchange semiconductor
mj15003.pdf 

isc Silicon NPN Power Transistor MJ15003DESCRIPTIONHigh DC Current Gain-: h = 25(Min)@I = 5AFE CWide Area of Safe OperationComplement to the PNP MJ15004Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
8.10. Size:205K inchange semiconductor
mj15001.pdf 

isc Silicon NPN Power Transistor MJ15001DESCRIPTIONHigh DC Current GainWide Area of Safe OperationComplement to the PNP MJ15002100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
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