MJ15004
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ15004
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200
W
Tensión colector-base (Vcb): 140
V
Tensión colector-emisor (Vce): 140
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 20
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2
MHz
Capacitancia de salida (Cc): 1000
pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar MJ15004
MJ15004
Datasheet (PDF)
..1. Size:101K onsemi
mj15003 mj15004.pdf 
MJ15003 (NPN),MJ15004 (PNP)Complementary SiliconPower TransistorsThe MJ15003 and MJ15004 are power transistors designed for highpower audio, disk head positioners and other linear applications.http://onsemi.comFeatures20 AMPERE High Safe Operating Area For Low Distortion Complementary Designs POWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON These
..2. Size:205K inchange semiconductor
mj15004.pdf
isc Silicon PNP Power Transistor MJ15004DESCRIPTIONHigh DC Current Gain-: h = 25(Min)@I = -5AFE CWide Area of Safe OperationComplement to Type MJ15003Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor high power audio,disk head positionersand other linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
0.1. Size:104K onsemi
mj15004g.pdf
MJ15003 (NPN),MJ15004 (PNP)Complementary SiliconPower TransistorsThe MJ15003 and MJ15004 are PowerBaset power transistorsdesigned for high power audio, disk head positioners and other linearhttp://onsemi.comapplications.Features 20 AMPEREPOWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary DesignsCOMPLEMENTARY SIL
8.1. Size:119K motorola
mj15003r.pdf
Order this documentMOTOROLAby MJ15003/DSEMICONDUCTOR TECHNICAL DATANPNMJ15003*Complementary Silicon PowerPNPMJ15004*TransistorsThe MJ15003 and MJ15004 are PowerBase power transistors designed for high*Motorola Preferred Devicepower audio, disk head positioners and other linear applications. High Safe Operating Area (100% Tested) 20 AMPERE250 W @ 50 V POWER TRA
8.2. Size:165K motorola
mj15001r.pdf
Order this documentMOTOROLAby MJ15001/DSEMICONDUCTOR TECHNICAL DATANPNMJ15001Complementary Silicon PowerPNPMJ15002TransistorsThe MJ15001 and MJ15002 are EpiBase power transistors designed for highpower audio, disk head positioners and other linear applications. High Safe Operating Area (100% Tested) 15 AMPERE200 W @ 40 V POWER TRANSISTORS50 W @ 100 V COMPLEMEN
8.3. Size:159K onsemi
mj15001 mj15002.pdf
MJ15001 (NPN),MJ15002 (PNP)Complementary SiliconPower TransistorsThe MJ15001 and MJ15002 are power transistors designed for highpower audio, disk head positioners and other linear applications.http://onsemi.comFeatures20 AMPERE High Safe Operating AreaPOWER TRANSISTORS For Low Distortion Complementary DesignsCOMPLEMENTARY SILICON High DC Current Gain Thes
8.4. Size:151K onsemi
mj15001g.pdf
MJ15001 (NPN),MJ15002 (PNP)Complementary SiliconPower TransistorsThe MJ15001 and MJ15002 are power transistors designed for highpower audio, disk head positioners and other linear applications.http://onsemi.comFeatures20 AMPERE High Safe Operating Area (100% Tested) - 5.0 A @ 40 V0.5 A @ 100 VPOWER TRANSISTORS For Low Distortion Complementary DesignsCOMPLEMENTARY
8.5. Size:104K onsemi
mj15003g.pdf
MJ15003 (NPN),MJ15004 (PNP)Complementary SiliconPower TransistorsThe MJ15003 and MJ15004 are PowerBaset power transistorsdesigned for high power audio, disk head positioners and other linearhttp://onsemi.comapplications.Features 20 AMPEREPOWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary DesignsCOMPLEMENTARY SIL
8.7. Size:165K cn sptech
mj15003.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJ15003DESCRIPTIONHigh DC Current Gain-: h = 25(Min)@I = 5AFE CWide Area of Safe OperationComplement to the PNP MJ15004APPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
8.8. Size:205K inchange semiconductor
mj15002.pdf
isc Silicon PNP Power Transistor MJ15002DESCRIPTIONHigh DC Current GainWide Area of Safe OperationComplement to the NPN MJ15001100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
8.9. Size:205K inchange semiconductor
mj15003.pdf
isc Silicon NPN Power Transistor MJ15003DESCRIPTIONHigh DC Current Gain-: h = 25(Min)@I = 5AFE CWide Area of Safe OperationComplement to the PNP MJ15004Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
8.10. Size:205K inchange semiconductor
mj15001.pdf
isc Silicon NPN Power Transistor MJ15001DESCRIPTIONHigh DC Current GainWide Area of Safe OperationComplement to the PNP MJ15002100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
