MJE16004 - описание и поиск аналогов

isc Silicon NPN Power Transistor MJE16004 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed switching of inductive circuits where fall time and RBSOA are critical. they are particularly wel

Order this document MOTOROLA by MJE16002/D SEMICONDUCTOR TECHNICAL DATA * MJE16002 Designer's Data Sheet * MJE16004 SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device These transistors are designed for high voltage, high speed switching of inductive 5.0 AMPERE circuits where fall time and RBSOA are critical. They are particularly well suited for N

Order this document MOTOROLA by MJE16204/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MJE16204 SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors POWER TRANSISTORS The MJE16204 is a state of the art SWITCHMODE bipolar power transistor. It is 6.0 AMPERES specifically designed for use in horizontal deflection circuits f