MJE16004 Datasheet. Specs and Replacement

Type Designator: MJE16004  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO220

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MJE16004 datasheet

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MJE16004

isc Silicon NPN Power Transistor MJE16004 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed switching of inductive circuits where fall time and RBSOA are critical. they are particularly wel... See More ⇒

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MJE16004

Order this document MOTOROLA by MJE16002/D SEMICONDUCTOR TECHNICAL DATA * MJE16002 Designer's Data Sheet * MJE16004 SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device These transistors are designed for high voltage, high speed switching of inductive 5.0 AMPERE circuits where fall time and RBSOA are critical. They are particularly well suited for N... See More ⇒

 8.1. Size:78K  njs

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MJE16004

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MJE16004

Order this document MOTOROLA by MJE16204/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MJE16204 SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors POWER TRANSISTORS The MJE16204 is a state of the art SWITCHMODE bipolar power transistor. It is 6.0 AMPERES specifically designed for use in horizontal deflection circuits f... See More ⇒

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Detailed specifications: MJE13070, MJE13071, MJE1320, MJE15028, MJE15029, MJE15030, MJE15031, MJE16002, 2SD669, MJE16106, MJE16204, MJE1660, MJE1661, MJE170, MJE171, MJE172, MJE180

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