MJE16004 Datasheet and Replacement

isc Silicon NPN Power Transistor MJE16004DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed switching ofinductive circuits where fall time and RBSOA are critical.they are particularly wel

Order this documentMOTOROLAby MJE16002/DSEMICONDUCTOR TECHNICAL DATA*MJE16002Designer's Data Sheet*MJE16004SWITCHMODE SeriesNPN Silicon Power Transistors*Motorola Preferred DeviceThese transistors are designed for highvoltage, highspeed switching of inductive5.0 AMPEREcircuits where fall time and RBSOA are critical. They are particularly wellsuited forN

Order this documentMOTOROLAby MJE16204/DSEMICONDUCTOR TECHNICAL DATADesigner's Data SheetMJE16204SCANSWITCHNPN Bipolar Power Deflection TransistorFor High and Very High Resolution MonitorsPOWER TRANSISTORSThe MJE16204 is a stateoftheart SWITCHMODE bipolar power transistor. It is6.0 AMPERESspecifically designed for use in horizontal deflection circuits f

Order this documentMOTOROLAby MJE16106/DSEMICONDUCTOR TECHNICAL DATAMJE16106Designer's Data SheetNPN Silicon Power TransistorPOWER TRANSISTORSSwitchmode Bridge Series8 AMPERES400 VOLTS. . . specifically designed for use in half bridge and full bridge off line converters.100 AND 125 WATTS Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability