MJE34B - описание и поиск аналогов

Order this document MOTOROLA by MJE340/D SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN 0.5 AMPERE Silicon Transistor POWER TRANSISTOR NPN SILICON . . . useful for high voltage general purpose applications. 300 VOLTS Suitable for Transformerless, Line Operated Equipment 20 WATTS Thermopad Construction Provides High Power Dissipation Rating for High Relia

Order this document MOTOROLA by MJE341/D SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS . . . useful for medium voltage applications requiring high fT such as converters and NPN SILICON extended range amplifiers. 150 200 VOLTS

MJE340 MJE350 Complementary silicon power transistors Features STMicroelectronics preferred salestypes Complementary NPN - PNP devices Applications Linear and switching industrial equipment 3 2 1 Description SOT-32 The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complemen

MJE3440 SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO 350 V Collector-Base Voltag

MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN 1 2 transistor intended for use in medium power 3 linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350. S

MJE340 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO

MJE3439 NPN Silicon High-Voltage Power Transistor This device is designed for use in line-operated equipment requiring high fT. Features http //onsemi.com High DC Current Gain - hFE = 40-160 @ IC = 20 mAdc 0.3 AMPERE Current Gain Bandwidth Product - fT = 15 MHz (Min) @ IC POWER TRANSISTOR = 10 mAdc NPN SILICON Low Output Capacitance - Cob = 10 pF (Max) @ f 350 VOLTS,

MJE344G Plastic NPN Silicon Medium-Power Transistor This device is useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. Features http //onsemi.com These Devices are Pb-Free and are RoHS Compliant* 0.5 AMPERE POWER TRANSISTORS MAXIMUM RATINGS NPN SILICON Rating Symbol Value Unit 150-200 VOLTS, 20 WATTS Collector-Emitter Volt

MJE3439G NPN Silicon High-Voltage Power Transistor This device is designed for use in line-operated equipment requiring high fT. Features http //onsemi.com High DC Current Gain 0.3 AMPERE High Current-Gain - Bandwidth Product Low Output Capacitance POWER TRANSISTOR These Devices are Pb-Free and are RoHS Compliant* NPN SILICON 350 VOLTS, 15 WATTS MAXIMUM RATINGS C

MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http //onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATT

MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http //onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATT

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE340 TO126 Plastic Package E C B For use in High Voltage General Purpose Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 300 V Collector Base Voltage VCBO 300 V VEBO Emitter Base Voltage 3.0 V IC C

isc Silicon NPN Power Transistor MJE340T DESCRIPTION Collector Emitter Sustaining Voltage- V = 300 V(Min) CEO(SUS) DC Current Gain- h = 100(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 50mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general p

isc Silicon NPN Power Transistor MJE341 DESCRIPTION Collector Emitter Sustaining Voltage- V = 150 V(Min) CEO(SUS) DC Current Gain- h = 20(Min) @ I = 150mA FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium voltage and extended range amplifiers applications. ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor MJE340 DESCRIPTION Collector Emitter Sustaining Voltage- V = 300 V(Min) CEO(SUS) DC Current Gain- h = 100(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 50mA CE(sat) C Complement to the PNP MJE350 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed