MJE34B Datasheet and Replacement

Order this documentMOTOROLAby MJE3439/DSEMICONDUCTOR TECHNICAL DATAMJE3439NPN Silicon High-Voltage Power0.3 AMPERETransistorsPOWER TRANSISTORNPN SILICON. . . designed for use in lineoperated equipment requiring high fT.350 VOLTS High DC Current Gain15 WATTShFE = 40160 @ IC = 20 mAdc Current Gain Bandwidth Product fT = 15 MHz (Min) @ IC = 10 mAdc

Order this documentMOTOROLAby MJE340/DSEMICONDUCTOR TECHNICAL DATAMJE340Plastic Medium Power NPN0.5 AMPERESilicon TransistorPOWER TRANSISTORNPN SILICON. . . useful for highvoltage general purpose applications.300 VOLTS Suitable for Transformerless, LineOperated Equipment20 WATTS Thermopad Construction Provides High Power Dissipation Rating for HighRelia

Order this documentMOTOROLAby MJE341/DSEMICONDUCTOR TECHNICAL DATAMJE341MJE344Plastic NPN SiliconMedium-Power Transistors0.5 AMPEREPOWER TRANSISTORS. . . useful for medium voltage applications requiring high fT such as converters andNPN SILICONextended range amplifiers.150200 VOLTS

MJE340MJE350Complementary silicon power transistorsFeatures STMicroelectronics preferred salestypes Complementary NPN - PNP devicesApplications Linear and switching industrial equipment321DescriptionSOT-32The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32.The complemen

MJE3440SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTORDESCRIPTIONThe MJE3440 is a NPN silicon epitaxial planartransistors in SOT-32 plastic package. It isdesigned for use in consumer and industrialline-operated applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO 350 VCollector-Base Voltag

MJE340MJE350COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe MJE340 is a silicon epitaxial planar NPN12transistor intended for use in medium power3linear and switching applications.It is mounted inSOT-32.The complementary PNP type is MJE350. S

MJE340High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 VVEBO

MJE3439NPN Silicon High-VoltagePower TransistorThis device is designed for use in line-operated equipmentrequiring high fT.Featureshttp://onsemi.com High DC Current Gain - hFE = 40-160 @ IC= 20 mAdc0.3 AMPERE Current Gain Bandwidth Product - fT = 15 MHz (Min) @ ICPOWER TRANSISTOR= 10 mAdcNPN SILICON Low Output Capacitance - Cob = 10 pF (Max) @ f350 VOLTS,

MJE344GPlastic NPN SiliconMedium-Power TransistorThis device is useful for medium voltage applications requiring highfT such as converters and extended range amplifiers.Featureshttp://onsemi.com These Devices are Pb-Free and are RoHS Compliant*0.5 AMPEREPOWER TRANSISTORSMAXIMUM RATINGSNPN SILICONRating Symbol Value Unit150-200 VOLTS, 20 WATTSCollector-Emitter Volt

MJE3439GNPN Silicon High-VoltagePower TransistorThis device is designed for use in line-operated equipmentrequiring high fT.Featureshttp://onsemi.com High DC Current Gain0.3 AMPERE High Current-Gain - Bandwidth Product Low Output CapacitancePOWER TRANSISTOR These Devices are Pb-Free and are RoHS Compliant*NPN SILICON350 VOLTS, 15 WATTSMAXIMUM RATINGSC

MJE340Plastic Medium-PowerNPN Silicon TransistorThis device is useful for high-voltage general purpose applications.Featureshttp://onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating0.5 AMPEREfor High Reliability Pb-Free Package is Available*POWER TRANSISTORNPN SILICON300 VOLTS, 20 WATT

MJE340Plastic Medium-PowerNPN Silicon TransistorThis device is useful for high-voltage general purpose applications.Featureshttp://onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating0.5 AMPEREfor High Reliability Pb-Free Package is Available*POWER TRANSISTORNPN SILICON300 VOLTS, 20 WATT

MJE344Plastic NPN SiliconMedium-Power TransistorThis device is useful for medium voltage applications requiring highfT such as converters and extended range amplifiers.Featureshttp://onsemi.com Pb-Free Package is Available*0.5 AMPEREPOWER TRANSISTORSMAXIMUM RATINGSNPN SILICONRating Symbol Value Unit150-200 VOLTS, 20 WATTS

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR MJE340TO126 Plastic PackageECBFor use in High Voltage General Purpose ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 300 VCollector Base Voltage VCBO 300 VVEBOEmitter Base Voltage 3.0 VICC

isc Silicon NPN Power Transistor MJE340TDESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CEO(SUS)DC Current Gain-: h = 100(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 50mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general p

isc Silicon NPN Power Transistor MJE341DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 150 V(Min)CEO(SUS)DC Current Gain-: h = 20(Min) @ I = 150mAFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium voltage and extended rangeamplifiers applications.ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor MJE340DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CEO(SUS)DC Current Gain-: h = 100(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 50mACE(sat) CComplement to the PNP MJE350Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned