MJE371 - аналоги, параметры транзистора - Справочник транзисторов

MJE371 - технические параметры

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

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isc Silicon PNP Power Transistor MJE371 DESCRIPTION Collector Emitter Sustaining Voltage V = CEO(SUS) -40V DC Current Gain h = 40(Min) @ I = -1A FE C Complement to Type MJE521 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching circuits. Recommended for u

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Order this document MOTOROLA by MJE371/D SEMICONDUCTOR TECHNICAL DATA MJE371 Plastic Medium-Power PNP 4 AMPERE Silicon Transistors POWER TRANSISTOR PNP SILICON . . . designed for use in general purpose amplifier and switching circuits. Recom- 40 VOLTS mended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry 40 WATTS circuitry. DC Current Gain hFE

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MJE371G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in general-purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. http //onsemi.com Features High DC Current Gain 4 AMPERES MJE371 is Complementary to NPN MJE521 POWER TRANSISTOR These Devices are Pb-Free