MJE371 Datasheet and Replacement
Type Designator: MJE371
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
MJE371 Substitution
MJE371 Datasheet (PDF)
mje371 mje521.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
mje371.pdf

isc Silicon PNP Power Transistor MJE371DESCRIPTIONCollectorEmitter Sustaining Voltage: V =CEO(SUS) -40VDC Current Gain: h = 40(Min) @ I = -1AFE CComplement to Type MJE521Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier and switchingcircuits.Recommended for u
mje371re.pdf

Order this documentMOTOROLAby MJE371/DSEMICONDUCTOR TECHNICAL DATAMJE371Plastic Medium-Power PNP4 AMPERESilicon TransistorsPOWER TRANSISTORPNP SILICON. . . designed for use in generalpurpose amplifier and switching circuits. Recom-40 VOLTSmended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry40 WATTScircuitry. DC Current Gain hFE
mje371g.pdf

MJE371GPlastic Medium-PowerPNP Silicon TransistorThis device is designed for use in general-purpose amplifier andswitching circuits. Recommended for use in 5 to 20 Watt audioamplifiers utilizing complementary symmetry circuitry.http://onsemi.comFeatures High DC Current Gain4 AMPERES MJE371 is Complementary to NPN MJE521POWER TRANSISTOR These Devices are Pb-Free
Datasheet: MJE34A , MJE34B , MJE34C , MJE350 , MJE3520 , MJE3521 , MJE370 , MJE370K , TIP3055 , MJE371K , MJE3738 , MJE3739 , MJE3740 , MJE3741 , MJE41 , MJE41A , MJE41B .
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