Биполярный транзистор MJE4341
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE4341
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 125
W
Макcимально допустимое напряжение коллектор-база (Ucb): 120
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 16
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 1
MHz
Ёмкость коллекторного перехода (Cc): 800
pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора:
TO218
Аналоги (замена) для MJE4341
MJE4341
Datasheet (PDF)
..1. Size:220K inchange semiconductor
mje4340 mje4341 mje4342 mje4343.pdf isc Silicon NPN Power Transistors MJE4340/4341/4342/4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- MJE4340CEO(SUS)= 120V(Min)- MJE4341= 140V(Min)- MJE4342= 160V(Min)- MJE4343Low Saturation VoltageComplement to the PNP MJE4350/4351/4352/4353APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching regul
8.1. Size:197K motorola
mje4342r.pdf Order this documentMOTOROLAby MJE4342/DSEMICONDUCTOR TECHNICAL DATANPNMJE4342High-Voltage High PowerMJE4343TransistorsPNPMJE4352. . . designed for use in high power audio amplifier applications and high voltageswitching regulator circuits. High CollectorEmitter Sustaining Voltage MJE4353NPN PNPVCEO(sus) = 140 Vdc MJE4342 MJE4352VCEO(sus) = 160 Vdc
8.2. Size:246K onsemi
mje4343 mje4353.pdf MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h
8.3. Size:137K onsemi
mje4343g.pdf MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h
8.4. Size:245K inchange semiconductor
mje4343.pdf isc Silicon NPN Power Transistor MJE4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 160V(Min)CEO(SUS)DC current gain -: h = 15 (Min) @I = 8 AFE C: h = 8 (Min) @I = 16AFE CComplement to Type MJE4353Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in high power audio amplifier andswitching regula
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