MJE4341 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

MJE4341 Datasheet. Specs and Replacement

Type Designator: MJE4341 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Collector Capacitance (Cc): 800 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO218

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MJE4341 Substitution

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MJE4341 datasheet

..1. Size:220K inchange semiconductor

mje4340 mje4341 mje4342 mje4343.pdf pdf_icon

isc Silicon NPN Power Transistors MJE4340/4341/4342/4343 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min)- MJE4340 CEO(SUS) = 120V(Min)- MJE4341 = 140V(Min)- MJE4342 = 160V(Min)- MJE4343 Low Saturation Voltage Complement to the PNP MJE4350/4351/4352/4353 APPLICATIONS Designed for use in high power audio amplifier applications and high voltage switching regul... See More ⇒

8.1. Size:197K motorola

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8.2. Size:246K onsemi

mje4343 mje4353.pdf pdf_icon

MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http //onsemi.com Features 16 AMPS High Collector-Emitter Sustaining Voltage - NPN PNP POWER TRANSISTORS VCEO(sus) = 160 Vdc - MJE4343 MJE4353 COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h... See More ⇒

8.3. Size:137K onsemi

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