MJE521K datasheet и подбор замены

 8.1. Size:128K  motorola
 mje521 mje521re.pdf 

Order this document MOTOROLA by MJE521/D SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN 4 AMPERE Silicon Transistor POWER TRANSISTOR NPN SILICON . . . designed for use in general purpose amplifier and switching circuits. Recom- 40 VOLTS mended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry 40 WATTS circuitry. DC Current Gain hFE

 8.2. Size:44K  st
 mje521.pdf 

MJE521 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJE521 is a silicon Epitaxial-Base NPN transistor in Jedec SOT-32 plastic package. It is intended for use in 5 to 20W audio amplifiers, general purpose amplifier and switching circuits. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collec

 8.3. Size:65K  central
 mje371 mje521.pdf 

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 8.4. Size:62K  onsemi
 mje521-d.pdf 

MJE521 Plastic Medium-Power NPN Silicon Transistor These devices are designed for use in general-purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. http //onsemi.com Features DC Current Gain - hFE = 40 (Min) @ IC 4 AMPERES = 1.0 Adc POWER TRANSISTORS Complementary to PNP MJE371 NPN SILIC

 8.5. Size:211K  inchange semiconductor
 mje521.pdf 

isc Silicon NPN Power Transistor MJE521 DESCRIPTION Collector Emitter Sustaining Voltage- V = 40 V(Min) CEO(SUS) DC Current Gain- h = 40(Min) @ I = 1A FE C Complement to Type MJE371 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching circuits applications. ABSOLU