MJE521K Datasheet. Specs and Replacement
Type Designator: MJE521K 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
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MJE521K Substitution
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MJE521K datasheet
Order this document MOTOROLA by MJE521/D SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN 4 AMPERE Silicon Transistor POWER TRANSISTOR NPN SILICON . . . designed for use in general purpose amplifier and switching circuits. Recom- 40 VOLTS mended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry 40 WATTS circuitry. DC Current Gain hFE ... See More ⇒
MJE521 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJE521 is a silicon Epitaxial-Base NPN transistor in Jedec SOT-32 plastic package. It is intended for use in 5 to 20W audio amplifiers, general purpose amplifier and switching circuits. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collec... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
MJE521 Plastic Medium-Power NPN Silicon Transistor These devices are designed for use in general-purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. http //onsemi.com Features DC Current Gain - hFE = 40 (Min) @ IC 4 AMPERES = 1.0 Adc POWER TRANSISTORS Complementary to PNP MJE371 NPN SILIC... See More ⇒
Detailed specifications: MJE5193, MJE5194, MJE5195, MJE51T, MJE52, MJE520, MJE520K, MJE521, NJW0281G, MJE52T, MJE53, MJE53T, MJE5420Z, MJE5655, MJE5656, MJE5657, MJE5730
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BJT Parameters and How They Relate
History: 2SC4080 | 2SC4080E | KT306VM | PN3706 | 2SC3940A | 2SC5185 | KT3146B-9
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