MJE700 datasheet, аналоги, основные параметры

Наименование производителя: MJE700  📄📄 

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 40 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 750

Корпус транзистора: TO126

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MJE700 даташит

 ..1. Size:51K  fairchild semi
 mje700.pdf pdf_icon

MJE700

MJE700/701/702/703 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Sym- Unit Parameter Value bol s VCB

 ..2. Size:228K  inchange semiconductor
 mje700.pdf pdf_icon

MJE700

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE700 DESCRIPTION Collector Emitter Breakdown Voltage V(BR)CEO =-60 V DC Current Gain hFE = 750(Min) @ IC=-1.5 A Complement to Type MJE800 APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25

 0.1. Size:256K  motorola
 mje700re.pdf pdf_icon

MJE700

Order this document MOTOROLA by MJE700/D SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors MJE703 . . . designed for general purpose amplifier and low speed switching applications. NPN High DC Current Gain MJE800,T hFE = 2000 (Typ) @ IC = 2.0 Adc Monolithic Construction with Built in Base Emitter Resis

 0.2. Size:126K  onsemi
 mje700g.pdf pdf_icon

MJE700

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit

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Другие транзисторы: MJE5984, MJE5985, MJE6040, MJE6041, MJE6042, MJE6043, MJE6044, MJE6045, C945, MJE700T, MJE701, MJE701T, MJE702, MJE702T, MJE703, MJE703T, MJE710