MJE700
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE700
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 4
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package:
TO126
MJE700
Transistor Equivalent Substitute - Cross-Reference Search
MJE700
Datasheet (PDF)
..1. Size:51K fairchild semi
mje700.pdf
MJE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to MJE800/801/802/803TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSym- UnitParameter Valuebol s VCB
..2. Size:228K inchange semiconductor
mje700.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE700 DESCRIPTION CollectorEmitter Breakdown Voltage : V(BR)CEO =-60 V DC Current Gain : hFE = 750(Min) @ IC=-1.5 A Complement to Type MJE800 APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25
0.1. Size:256K motorola
mje700re.pdf
Order this documentMOTOROLAby MJE700/DSEMICONDUCTOR TECHNICAL DATAPNPMJE700,TPlastic DarlingtonComplementary Silicon PowerMJE702TransistorsMJE703. . . designed for generalpurpose amplifier and lowspeed switching applications.NPN High DC Current Gain MJE800,ThFE = 2000 (Typ) @ IC = 2.0 Adc Monolithic Construction with Builtin BaseEmitter Resis
0.2. Size:126K onsemi
mje700g.pdf
MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit
0.3. Size:215K inchange semiconductor
mje700t.pdf
isc Silicon PNP Darlington Power Transistor MJE700TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = -60 V(BR)CEODC Current Gain: h = 750(Min) @ I = -1.5 AFE C= 100(Min) @ I = -4ACComplement to Type MJE800TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-spe
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