Биполярный транзистор MMBT6427 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMBT6427
Маркировка: 1V_K1D
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 0.35 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 7 pf
Статический коэффициент передачи тока (hfe): 50000
Корпус транзистора: SOT23
MMBT6427 Datasheet (PDF)
mmbt6427.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6427LT1/DDarlington TransistorMMBT6427LT1NPN SiliconMotorola Preferred DeviceCOLLECTOR 3BASE13EMITTER 21MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 40 VdcEmitterBase Voltage VEBO 12
2n6427 mmbt6427.pdf
2N6427 MMBT6427CEC TO-92BBSOT-23EMark: 1VNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourced fromProcess 05. See MPSA14 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collect
mmbt6427.pdf
MMBT6427COLLECTOR 3Darlington AmplifierTransistorsNPN* We declare that the material of product compliance with RoHS requirements.BASE1P b Lead(Pb)-FreeEMITTER 2MAXIMUM RATINGS3Rating Symbol V alue UnitCollectorEmitter Voltage V CEO 40 Vdc12CollectorBase Voltage V CBO 40 VdcEmitterBase Voltage V EBO 12 VdcSOT-23Collector Current Continuous I C 5
mmbt6427lt1g.pdf
MMBT6427LT1G,SMMBT6427LT1GDarlington TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23 (TO-236)CASE 318STYLE 6MAXIMUM RATINGSRating Symbol Value Un
mmbt6428 mmbt6429.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6428LT1/DAmplifier TransistorsMMBT6428LT1COLLECTORNPN SiliconMMBT6429LT131BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 6428LT1 6429LT1 Unit2CollectorEmitter Voltage VCEO 50 45 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 55 VdcSOT23 (TO236AB)EmitterBase Voltage VEBO
mmbt6428.pdf
MMBT6428NPN General Purpose Amplifier3 This device designed for general pupose amplifier applications at collector currents to 300mA Sourced from process 10.2SOT-231Mark: 1K1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VIC C
mmbt6429lt1g.pdf
MMBT6428LT1G,MMBT6429LT1G,NSVMMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeaturesCOLLECTOR3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2EMITTER3SOT-23 (TO-236)MAXIM
mmbt6428lt1 mmbt6429lt1.pdf
MMBT6428LT1G,MMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS 2EMITTERRating Symbol 6428LT1 6429LT1 UnitCollector-Emitter Voltage VCEO 50 45 VdcCollector-Base Voltage VCBO 60 55 Vdc3SOT-23 (TO-236)Emitter-Base Voltage VEBO 6.0 VdcCA
mmbt6428lt1g mmbt6429lt1g nsvmmbt6429lt1g.pdf
MMBT6428LT1G,MMBT6429LT1G,NSVMMBT6429LT1GAmplifier TransistorsNPN Siliconwww.onsemi.comFeaturesCOLLECTOR3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2EMITTER3SOT-23 (TO-236)MAXIMUM
nsvmmbt6429lt1g.pdf
MMBT6428LT1G,MMBT6429LT1G,NSVMMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeaturesCOLLECTOR3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2EMITTER3SOT-23 (TO-236)MAXIM
mmbt6428lt1g.pdf
MMBT6428LT1G,MMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS 2EMITTERRating Symbol 6428LT1 6429LT1 UnitCollector-Emitter Voltage VCEO 50 45 VdcCollector-Base Voltage VCBO 60 55 Vdc3SOT-23 (TO-236)Emitter-Base Voltage VEBO 6.0 VdcCA
mmbt6428lt1.pdf
SEMICONDUCTOR MMBT6428LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 Amplifier Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 6 V PIN: 1 2 3Collector Current Ic 200 mA STYLE
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
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