MMBT6427 Datasheet, Equivalent, Cross Reference Search

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6427LT1/DDarlington TransistorMMBT6427LT1NPN SiliconMotorola Preferred DeviceCOLLECTOR 3BASE13EMITTER 21MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 40 VdcEmitterBase Voltage VEBO 12

2N6427 MMBT6427CEC TO-92BBSOT-23EMark: 1VNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourced fromProcess 05. See MPSA14 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collect

MMBT6427COLLECTOR 3Darlington AmplifierTransistorsNPN* We declare that the material of product compliance with RoHS requirements.BASE1P b Lead(Pb)-FreeEMITTER 2MAXIMUM RATINGS3Rating Symbol V alue UnitCollectorEmitter Voltage V CEO 40 Vdc12CollectorBase Voltage V CBO 40 VdcEmitterBase Voltage V EBO 12 VdcSOT-23Collector Current Continuous I C 5

MMBT6427LT1G,SMMBT6427LT1GDarlington TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23 (TO-236)CASE 318STYLE 6MAXIMUM RATINGSRating Symbol Value Un

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6428LT1/DAmplifier TransistorsMMBT6428LT1COLLECTORNPN SiliconMMBT6429LT131BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 6428LT1 6429LT1 Unit2CollectorEmitter Voltage VCEO 50 45 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 55 VdcSOT23 (TO236AB)EmitterBase Voltage VEBO

MMBT6428NPN General Purpose Amplifier3 This device designed for general pupose amplifier applications at collector currents to 300mA Sourced from process 10.2SOT-231Mark: 1K1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VIC C

MMBT6428LT1G,MMBT6429LT1G,NSVMMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeaturesCOLLECTOR3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2EMITTER3SOT-23 (TO-236)MAXIM

MMBT6428LT1G,MMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS 2EMITTERRating Symbol 6428LT1 6429LT1 UnitCollector-Emitter Voltage VCEO 50 45 VdcCollector-Base Voltage VCBO 60 55 Vdc3SOT-23 (TO-236)Emitter-Base Voltage VEBO 6.0 VdcCA

MMBT6428LT1G,MMBT6429LT1G,NSVMMBT6429LT1GAmplifier TransistorsNPN Siliconwww.onsemi.comFeaturesCOLLECTOR3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2EMITTER3SOT-23 (TO-236)MAXIMUM

MMBT6428LT1G,MMBT6429LT1G,NSVMMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeaturesCOLLECTOR3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2EMITTER3SOT-23 (TO-236)MAXIM

MMBT6428LT1G,MMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS 2EMITTERRating Symbol 6428LT1 6429LT1 UnitCollector-Emitter Voltage VCEO 50 45 VdcCollector-Base Voltage VCBO 60 55 Vdc3SOT-23 (TO-236)Emitter-Base Voltage VEBO 6.0 VdcCA

SEMICONDUCTOR MMBT6428LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 Amplifier Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 6 V PIN: 1 2 3Collector Current Ic 200 mA STYLE