P27 datasheet, аналоги, основные параметры
Наименование производителя: P27 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.03 W
Макcимально допустимое напряжение коллектор-база (Ucb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.006 A
Предельная температура PN-перехода (Tj): 75 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 1 MHz
Ёмкость коллекторного перехода (Cc): 50 pf
Статический коэффициент передачи тока (hFE): 20
Аналоги (замена) для P27
- подборⓘ биполярного транзистора по параметрам
P27 даташит
sp2700.pdf
Green Product SP2700 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 210 @ VGS=10V Suface Mount Package. 75V 2.5A 250 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless o
mtp27n10erev0a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP27N10E/D Designer's Data Sheet MTP27N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS e
mtp27n10e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP27N10E/D Designer's Data Sheet MTP27N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS e
irfp27n60k.pdf
PD - 94407 SMPS MOSFET IRFP27N60K HEXFET Power MOSFET Applications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 180m 27A High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Char
irfp27n60kpbf.pdf
PD - 95479A SMPS MOSFET IRFP27N60KPbF HEXFET Power MOSFET Applications l Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 600V 180m 27A l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt
phb27nq10t phd27nq10t php27nq10t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 28 A g RDS(ON) 50 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
php27nq11t.pdf
PHP27NQ11T N-channel TrenchMOS standard level FET Rev. 02 4 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Featu
sth270n8f7-2 sth270n8f7-6 stp270n8f7.pdf
STH270N8F7-2, STH270N8F7-6, STP270N8F7 N-channel 80 V, 0.0017 typ., 180 A, STripFET F7 Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220 packages Datasheet - production data TAB Features TAB Order codes VDS RDS(on) max ID 2 7 3 1 STH270N8F7-2 1 0.0021 STH270N8F7-6 80 V 180 A H2PAK-2 H2PAK-6 STP270N8F7 0.0025 TAB Among the lowest RDS(on) on the market Excellen
std27n3lh5 stp27n3lh5 stu27n3lh5.pdf
STD27N3LH5, STP27N3LH5 STU27N3LH5 N-channel 30 V, 0.014 , 27 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS(on) max ID 3 3 STD27N3LH5 30 V 0.019 27 A 1 2 1 STP27N3LH5 30 V 0.020 27 A IPAK DPAK STU27N3LH5 30 V 0.020 27 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge 3
stp270n04.pdf
STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS(on) ID PTOT STB270N04-1 40V
stb270n04-1 stb270n04 stp270n04.pdf
STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS(on) ID PTOT STB270N04-1 40V
stp270n4f3.pdf
STB270N4F3 STI270N4F3 - STP270N4F3 N-channel 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS(on) ID PTOT STB270N4F3 40V
fdp2710.pdf
November 2007 FDP2710 tm 250V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semicon- 50A, 250V, RDS(on) = 36.3m @VGS = 10 V ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superior switching p
fqp27p06.pdf
May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored
fdp2710 f085.pdf
February 2010 FDP2710_F085 N-Channel PowerTrench MOSFET 250V, 50A, 47m Features General Description This N-Channel MOSFET is produced using Fairchil Semi- Typ rDS(on) = 38m at VGS = 10V, ID = 50A conductor s advanced PowerTrench process that has been Typ Qg(TOT) = 78nC at VGS = 10V especially tailored to minimize the on-state resistance and yet maintain superior switc
fqp27n25.pdf
May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been e
fqp27p06 sw82127.pdf
May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored
php27nq11t.pdf
PHP27NQ11T N-channel TrenchMOS standard level FET Rev. 02 4 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Featu
irfp27n60k sihfp27n60k.pdf
IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.18 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Co
irfp27n60k irfp27n60kpbf sihfp27n60k.pdf
IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.18 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Co
ixta270n04t4 ixth270n04t4 ixtp270n04t4.pdf
Advance Technical Information VDSS = 40V TrenchT4TM IXTA270N04T4 ID25 = 270A Power MOSFET IXTP270N04T4 RDS(on) 2.4m IXTH270N04T4 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C40 V G D D (Tab) S VDGR TJ = 25 C to 175 C, RG
fdp2710.pdf
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fdp2710-f085.pdf
FDP2710-F085 N-Channel PowerTrench MOSFET 250V, 50A, 47m General Description This N-Channel MOSFET is produced using ON Semi- Features conductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Typ rDS(on) = 38m at VGS = 10V, ID = 50A yet maintain superior switching performance. Typ Qg(TOT) = 78nC at VGS = 10V Appl
fqp27p06.pdf
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ntb27n06lt4 ntp27n06l.pdf
NTP27N06L, NTB27N06L Power MOSFET 27 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http //onsemi.com Typical Applications Power Supplies 27 AMPERES Converters 60 VOLTS Power Motor Controls RDS(on) = 48 m Bridge Circuits N-
ntp27n06-d ntp27n06.pdf
NTP27N06 Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters, power motor controls and bridge circuits. Features 27 AMPERES, 60 VOLTS Higher Current Rating RDS(on) = 46 mW Lower RDS(on) Lower VDS(on) N-Channel Lower Capacitances D Pb-Free Package is Available
rt2p27m.pdf
RT2P27M Composite Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2P27M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=22k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui
ap2762in-a.pdf
AP2762IN-A Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D VDS @ Tj,max. 700V Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP2762 series are from Advanced Power innovated design and silicon process technology to achieve the lo
ap2764ai.pdf
AP2764AI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G S Description AP2764A series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. G D S TO-220C
ap2764i-a-hf.pdf
AP2764I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 680V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G S Description AP2764 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. TO-220CFM type p
ap2763i-a.pdf
AP2763I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 750V Isolation Full Package RDS(ON) 1.45 Fast Switching Characteristics ID 8.0A G S Description AP2763 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. TO-220CFM
ap2762r-a.pdf
AP2762R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7A G RoHS Compliant S Description AP2762 series are from Advanced Power innovated design and G silicon process technology to achieve the lowest possible on
ap2732gk.pdf
AP2732GK RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Lower Gate Charge RDS(ON) 26m Fast Switching Characteristic ID 8.6A S D RoHS Compliant SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on- re
ap2762r-a-hf.pdf
AP2762R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7A G RoHS Compliant S Description AP2762 series are specially designed as main switching devices for G universal 90 265VAC off-line AC/DC converter applica
ap2761p-a.pdf
AP2761P-A Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant S Description The TO-220 package is universally preferred for all commercial- industrial applications. The device is suited for DC-DC ,AC-
ap2763w-a.pdf
AP2763W-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 750V Fast Switching Characteristic RDS(ON) 1.45 Simple Drive Requirement ID 8.0A G S Description AP2763 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. The TO-3P pack
ap2761i-a-hf.pdf
AP2761I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant S Description AP2761 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- r
ap2761i-a.pdf
AP2761I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G S Description AP2761 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. TO-220CFM type p
ap2732gk-hf.pdf
AP2732GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Lower Gate Charge RDS(ON) 26m Fast Switching Characteristic ID 8.6A S D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch
ap2762i-a.pdf
AP2762I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7A G S Description AP2762 series are specially designed as main switching devices for G DS universal 90 265VAC off-line AC/DC converter applications. TO-220CFM
ap2762i-h-hf.pdf
AP2762I-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 700V Fast Switching Characteristics RDS(ON) 1.45 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP2762 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC conv
ap2764ai-a-hf.pdf
AP2764AI-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G RoHS Compliant S Description AP2764A series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applicat
ap2761i-h.pdf
AP2761I-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 1.3 Simple Drive Requirement ID 6A G RoHS Compliant S Description AP2761 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applicatio
ap2764i-a.pdf
AP2764I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 680V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G S Description AP2764 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. TO-220CFM type p
ap2762s-a-hf.pdf
AP2762S-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP2762 series are specially designed as main switching devices for G D universal 90 265VAC off-line AC/DC
ap2764ai-a.pdf
AP2764AI-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G RoHS Compliant & Halogen-Free S Description AP2764A series are from Advanced Power innova
ap2761r-a.pdf
AP2761R-A Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant S Description AP2761 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications
ap2764ap-a-hf.pdf
AP2764AP-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G RoHS Compliant & Halogen-Free S Description AP2764A series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC con
ap2764ai-hf.pdf
AP2764AI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G RoHS Compliant S Description AP2764A series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applicatio
ap2765i-a-hf.pdf
AP2765I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8A G RoHS Compliant & Halogen-Free S Description AP2765 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC conv
ap2762i-a-hf.pdf
AP2762I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7A G RoHS Compliant S Description AP2762 series are specially designed as main switching devices for G D universal 90 265VAC off-line AC/DC converter appl
ap2761s-a-hf.pdf
AP2761S-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description AP2761S is specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter appl
ap2761s-a.pdf
AP2761S-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description AP2761 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p
ap2761i-h-hf.pdf
AP2761I-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 1.3 Simple Drive Requirement ID 6A G RoHS Compliant S Description AP2761 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applicatio
ap2764ap-a.pdf
AP2764AP-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G S Description AP2764A series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. G TO-220(P)
sp2702.pdf
Green Product SP2702 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 513 @ VGS=10V Suface Mount Package. 75V 1.6A 614 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 3 D2 S 2 PIN1 D1 7 2 G 1 8 1 D1 S 1 PDFN 5x6 AB
p2703bag.pdf
P2703BAG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 27m @VGS = 10V 7A TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 7 ID Continuous Drain Current1 TA = 70 C 4.5 A IDM 35 Pulsed Drain Current2 IAS Avalanche Current 17 EA
p2710ad.pdf
P2710AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 32m @VGS = 10V 100V 34A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 34 ID Continuous Drain Current1 TC = 100 C 22 A IDM 100 Pulsed Drain Curre
knp2708a knb2708a.pdf
160A 80V KNX2708A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.General Features Proprietary NewTrenchTechnology R =4.0m @V =10V DS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode 2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter 3. Pinconfiguration Pin Function 1 Gate 2 D
wm03p27m.pdf
WM03P27M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -2.7A DS D R
irfp27n60k.pdf
iscN-Channel MOSFET Transistor IRFP27N60K FEATURES Low drain-source on-resistance RDS(ON) =0.22 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
Другие транзисторы: P216D, P216G, P216V, P217, P217A, P217B, P217G, P217V, 2SC2383, P27A, P28, P29, P29A, P30, P302, P303, P303A
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