P27 Datasheet. Specs and Replacement
Type Designator: P27 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.03 W
Maximum Collector-Base Voltage |Vcb|: 5 V
Maximum Collector Current |Ic max|: 0.006 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
P27 Substitution
- BJT ⓘ Cross-Reference Search
P27 datasheet
Green Product SP2700 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 210 @ VGS=10V Suface Mount Package. 75V 2.5A 250 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless o... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP27N10E/D Designer's Data Sheet MTP27N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS e... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP27N10E/D Designer's Data Sheet MTP27N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS e... See More ⇒
PD - 94407 SMPS MOSFET IRFP27N60K HEXFET Power MOSFET Applications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 180m 27A High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Char... See More ⇒
PD - 95479A SMPS MOSFET IRFP27N60KPbF HEXFET Power MOSFET Applications l Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 600V 180m 27A l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt... See More ⇒
phb27nq10t phd27nq10t php27nq10t 1.pdf 
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 28 A g RDS(ON) 50 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a ... See More ⇒
PHP27NQ11T N-channel TrenchMOS standard level FET Rev. 02 4 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Featu... See More ⇒
sth270n8f7-2 sth270n8f7-6 stp270n8f7.pdf
STH270N8F7-2, STH270N8F7-6, STP270N8F7 N-channel 80 V, 0.0017 typ., 180 A, STripFET F7 Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220 packages Datasheet - production data TAB Features TAB Order codes VDS RDS(on) max ID 2 7 3 1 STH270N8F7-2 1 0.0021 STH270N8F7-6 80 V 180 A H2PAK-2 H2PAK-6 STP270N8F7 0.0025 TAB Among the lowest RDS(on) on the market Excellen... See More ⇒
std27n3lh5 stp27n3lh5 stu27n3lh5.pdf
STD27N3LH5, STP27N3LH5 STU27N3LH5 N-channel 30 V, 0.014 , 27 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS(on) max ID 3 3 STD27N3LH5 30 V 0.019 27 A 1 2 1 STP27N3LH5 30 V 0.020 27 A IPAK DPAK STU27N3LH5 30 V 0.020 27 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge 3 ... See More ⇒
STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS(on) ID PTOT STB270N04-1 40V ... See More ⇒
stb270n04-1 stb270n04 stp270n04.pdf
STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS(on) ID PTOT STB270N04-1 40V ... See More ⇒
STB270N4F3 STI270N4F3 - STP270N4F3 N-channel 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS(on) ID PTOT STB270N4F3 40V ... See More ⇒
November 2007 FDP2710 tm 250V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semicon- 50A, 250V, RDS(on) = 36.3m @VGS = 10 V ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superior switching p... See More ⇒
May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored ... See More ⇒
February 2010 FDP2710_F085 N-Channel PowerTrench MOSFET 250V, 50A, 47m Features General Description This N-Channel MOSFET is produced using Fairchil Semi- Typ rDS(on) = 38m at VGS = 10V, ID = 50A conductor s advanced PowerTrench process that has been Typ Qg(TOT) = 78nC at VGS = 10V especially tailored to minimize the on-state resistance and yet maintain superior switc... See More ⇒
May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been e... See More ⇒
May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored ... See More ⇒
PHP27NQ11T N-channel TrenchMOS standard level FET Rev. 02 4 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Featu... See More ⇒
IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.18 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Co... See More ⇒
irfp27n60k irfp27n60kpbf sihfp27n60k.pdf
IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.18 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Co... See More ⇒
ixta270n04t4 ixth270n04t4 ixtp270n04t4.pdf
Advance Technical Information VDSS = 40V TrenchT4TM IXTA270N04T4 ID25 = 270A Power MOSFET IXTP270N04T4 RDS(on) 2.4m IXTH270N04T4 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C40 V G D D (Tab) S VDGR TJ = 25 C to 175 C, RG... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
FDP2710-F085 N-Channel PowerTrench MOSFET 250V, 50A, 47m General Description This N-Channel MOSFET is produced using ON Semi- Features conductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Typ rDS(on) = 38m at VGS = 10V, ID = 50A yet maintain superior switching performance. Typ Qg(TOT) = 78nC at VGS = 10V Appl... See More ⇒
FQP27P06 P-Channel QFET MOSFET - 60 V, - 27 A, 70 m Features - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V, Description ID = - 13.5 A This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary Low Gate Charge (Typ. 33 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 120 pF) MOSFET technology has been... See More ⇒
NTP27N06L, NTB27N06L Power MOSFET 27 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http //onsemi.com Typical Applications Power Supplies 27 AMPERES Converters 60 VOLTS Power Motor Controls RDS(on) = 48 m Bridge Circuits N-... See More ⇒
NTP27N06 Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters, power motor controls and bridge circuits. Features 27 AMPERES, 60 VOLTS Higher Current Rating RDS(on) = 46 mW Lower RDS(on) Lower VDS(on) N-Channel Lower Capacitances D Pb-Free Package is Available... See More ⇒
RT2P27M Composite Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2P27M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=22k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui... See More ⇒
AP2762IN-A Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D VDS @ Tj,max. 700V Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP2762 series are from Advanced Power innovated design and silicon process technology to achieve the lo... See More ⇒
AP2764AI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G S Description AP2764A series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. G D S TO-220C... See More ⇒
AP2764I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 680V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G S Description AP2764 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. TO-220CFM type p... See More ⇒
AP2763I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 750V Isolation Full Package RDS(ON) 1.45 Fast Switching Characteristics ID 8.0A G S Description AP2763 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. TO-220CFM ... See More ⇒
AP2762R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7A G RoHS Compliant S Description AP2762 series are from Advanced Power innovated design and G silicon process technology to achieve the lowest possible on... See More ⇒
AP2732GK RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Lower Gate Charge RDS(ON) 26m Fast Switching Characteristic ID 8.6A S D RoHS Compliant SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on- re... See More ⇒
AP2762R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7A G RoHS Compliant S Description AP2762 series are specially designed as main switching devices for G universal 90 265VAC off-line AC/DC converter applica... See More ⇒
AP2761P-A Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant S Description The TO-220 package is universally preferred for all commercial- industrial applications. The device is suited for DC-DC ,AC-... See More ⇒
AP2763W-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 750V Fast Switching Characteristic RDS(ON) 1.45 Simple Drive Requirement ID 8.0A G S Description AP2763 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. The TO-3P pack... See More ⇒
AP2761I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant S Description AP2761 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- r... See More ⇒
AP2761I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G S Description AP2761 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. TO-220CFM type p... See More ⇒
AP2732GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Lower Gate Charge RDS(ON) 26m Fast Switching Characteristic ID 8.6A S D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch... See More ⇒
AP2762I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7A G S Description AP2762 series are specially designed as main switching devices for G DS universal 90 265VAC off-line AC/DC converter applications. TO-220CFM... See More ⇒
AP2762I-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 700V Fast Switching Characteristics RDS(ON) 1.45 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP2762 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC conv... See More ⇒
AP2764AI-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G RoHS Compliant S Description AP2764A series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applicat... See More ⇒
AP2761I-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 1.3 Simple Drive Requirement ID 6A G RoHS Compliant S Description AP2761 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applicatio... See More ⇒
AP2764I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 680V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G S Description AP2764 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. TO-220CFM type p... See More ⇒
AP2762S-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP2762 series are specially designed as main switching devices for G D universal 90 265VAC off-line AC/DC... See More ⇒
AP2764AI-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G RoHS Compliant & Halogen-Free S Description AP2764A series are from Advanced Power innova... See More ⇒
AP2761R-A Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant S Description AP2761 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications... See More ⇒
AP2764AP-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G RoHS Compliant & Halogen-Free S Description AP2764A series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC con... See More ⇒
AP2764AI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G RoHS Compliant S Description AP2764A series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applicatio... See More ⇒
AP2765I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8A G RoHS Compliant & Halogen-Free S Description AP2765 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC conv... See More ⇒
AP2762I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7A G RoHS Compliant S Description AP2762 series are specially designed as main switching devices for G D universal 90 265VAC off-line AC/DC converter appl... See More ⇒
AP2761S-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description AP2761S is specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter appl... See More ⇒
AP2761S-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description AP2761 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p... See More ⇒
AP2761I-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 1.3 Simple Drive Requirement ID 6A G RoHS Compliant S Description AP2761 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applicatio... See More ⇒
AP2764AP-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9A G S Description AP2764A series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. G TO-220(P) ... See More ⇒
Green Product SP2702 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 513 @ VGS=10V Suface Mount Package. 75V 1.6A 614 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 3 D2 S 2 PIN1 D1 7 2 G 1 8 1 D1 S 1 PDFN 5x6 AB... See More ⇒
P2703BAG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 27m @VGS = 10V 7A TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 7 ID Continuous Drain Current1 TA = 70 C 4.5 A IDM 35 Pulsed Drain Current2 IAS Avalanche Current 17 EA... See More ⇒
P2710AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 32m @VGS = 10V 100V 34A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 34 ID Continuous Drain Current1 TC = 100 C 22 A IDM 100 Pulsed Drain Curre... See More ⇒
160A 80V KNX2708A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.General Features Proprietary NewTrenchTechnology R =4.0m @V =10V DS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode 2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter 3. Pinconfiguration Pin Function 1 Gate 2 D... See More ⇒
WM03P27M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -2.7A DS D R ... See More ⇒
iscN-Channel MOSFET Transistor IRFP27N60K FEATURES Low drain-source on-resistance RDS(ON) =0.22 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
Detailed specifications: P216D, P216G, P216V, P217, P217A, P217B, P217G, P217V, 2SC2383, P27A, P28, P29, P29A, P30, P302, P303, P303A
Keywords - P27 pdf specs
P27 cross reference
P27 equivalent finder
P27 pdf lookup
P27 substitution
P27 replacement
