P27 Datasheet and Replacement

GreenProductSP2700aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.210 @ VGS=10VSuface Mount Package.75V 2.5A250 @ VGS=4.5VD1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless o

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP27N10E/DDesigner's Data SheetMTP27N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high27 AMPERESenergy in the avalanche and commutation modes. This new energy100 VOLTSe

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP27N10E/DDesigner's Data SheetMTP27N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high27 AMPERESenergy in the avalanche and commutation modes. This new energy100 VOLTSe

PD - 94407SMPS MOSFETIRFP27N60KHEXFET Power MOSFETApplications Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply600V 180m 27A High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Char

PD - 95479ASMPS MOSFETIRFP27N60KPbFHEXFET Power MOSFETApplicationsl Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply600V 180m 27Al High Speed Power Switchingl Motor Drivel Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 28 AgRDS(ON) 50 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a

PHP27NQ11TN-channel TrenchMOS standard level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featu

STH270N8F7-2, STH270N8F7-6, STP270N8F7N-channel 80 V, 0.0017 typ., 180 A, STripFET F7 Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220 packagesDatasheet - production dataTAB FeaturesTABOrder codes VDS RDS(on) max ID2731 STH270N8F7-210.0021 STH270N8F7-6 80 V 180 AH2PAK-2 H2PAK-6STP270N8F7 0.0025 TAB Among the lowest RDS(on) on the market Excellen

STD27N3LH5, STP27N3LH5STU27N3LH5N-channel 30 V, 0.014 , 27 A, DPAK, IPAK, TO-220STripFET V Power MOSFETFeaturesType VDSS RDS(on) max ID33STD27N3LH5 30 V 0.019 27 A 121STP27N3LH5 30 V 0.020 27 A IPAK DPAKSTU27N3LH5 30 V 0.020 27 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge3

STB270N04STB270N04-1 - STP270N04N-CHANNEL 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB270N04-1 40V

STB270N04STB270N04-1 - STP270N04N-CHANNEL 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB270N04-1 40V

STB270N4F3STI270N4F3 - STP270N4F3N-channel 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB270N4F3 40V

November 2007FDP2710tm250V N-Channel PowerTrench MOSFETGeneral Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- 50A, 250V, RDS(on) = 36.3m @VGS = 10 Vductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superior switching p

May 2001TMQFETFQP27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored

February 2010FDP2710_F085N-Channel PowerTrench MOSFET 250V, 50A, 47m Features General DescriptionThis N-Channel MOSFET is produced using Fairchil Semi- Typ rDS(on) = 38m at VGS = 10V, ID = 50A conductors advanced PowerTrench process that has been Typ Qg(TOT) = 78nC at VGS = 10Vespecially tailored to minimize the on-state resistance and yet maintain superior switc

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been e

May 2001TMQFETFQP27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored

PHP27NQ11TN-channel TrenchMOS standard level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featu

IRFP27N60K, SiHFP27N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.18RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 56 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 86and CurrentCo

IRFP27N60K, SiHFP27N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.18RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 56 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 86and CurrentCo

Advance Technical InformationVDSS = 40VTrenchT4TMIXTA270N04T4ID25 = 270APower MOSFET IXTP270N04T4 RDS(on) 2.4m IXTH270N04T4N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C40 VGDD (Tab)SVDGR TJ = 25C to 175C, RG

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDP2710-F085N-Channel PowerTrench MOSFET250V, 50A, 47m General DescriptionThis N-Channel MOSFET is produced using ON Semi-Features conductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Typ rDS(on) = 38m at VGS = 10V, ID = 50Ayet maintain superior switching performance. Typ Qg(TOT) = 78nC at VGS = 10VAppl

FQP27P06P-Channel QFET MOSFET- 60 V, - 27 A, 70 mFeatures - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V,DescriptionID = - 13.5 AThis P-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary Low Gate Charge (Typ. 33 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 120 pF)MOSFET technology has been

NTP27N06L, NTB27N06LPower MOSFET27 Amps, 60 Volts, Logic LevelN-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inpower supplies, converters, power motor controls and bridge circuits.http://onsemi.comTypical Applications Power Supplies27 AMPERES Converters60 VOLTS Power Motor ControlsRDS(on) = 48 m Bridge CircuitsN-

NTP27N06Power MOSFET27 Amps, 60 VoltsN-Channel TO-220Designed for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters, power motor controls and bridge circuits.Features27 AMPERES, 60 VOLTS Higher Current RatingRDS(on) = 46 mW Lower RDS(on) Lower VDS(on) N-Channel Lower Capacitances D Pb-Free Package is Available

RT2P27M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P27M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

AP2762IN-AHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D VDS @ Tj,max. 700V Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP2762 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

AP2764AIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9AGSDescriptionAP2764A series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications.GDSTO-220C

AP2764I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 680VD Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9AGSDescriptionAP2764 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications.TO-220CFM type p

AP2763I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 750V Isolation Full Package RDS(ON) 1.45 Fast Switching Characteristics ID 8.0AGSDescriptionAP2763 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications.TO-220CFM

AP2762R-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7AG RoHS CompliantSDescriptionAP2762 series are from Advanced Power innovated design andGsilicon process technology to achieve the lowest possible on

AP2732GKRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Lower Gate Charge RDS(ON) 26m Fast Switching Characteristic ID 8.6ASD RoHS CompliantSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, low on-re

AP2762R-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7AG RoHS CompliantSDescriptionAP2762 series are specially designed as main switching devices forGuniversal 90~265VAC off-line AC/DC converter applica

AP2761P-APb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS CompliantSDescriptionThe TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for DC-DC ,AC-

AP2763W-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 750V Fast Switching Characteristic RDS(ON) 1.45 Simple Drive Requirement ID 8.0AGSDescriptionAP2763 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications.The TO-3P pack

AP2761I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS CompliantSDescriptionAP2761 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-r

AP2761I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AGSDescriptionAP2761 series are specially designed as main switching devices for universal90~265VAC off-line AC/DC converter applications. TO-220CFM type p

AP2732GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Lower Gate Charge RDS(ON) 26m Fast Switching Characteristic ID 8.6ASD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switch

AP2762I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7AGSDescriptionAP2762 series are specially designed as main switching devices forGDSuniversal 90~265VAC off-line AC/DC converter applications.TO-220CFM

AP2762I-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 700V Fast Switching Characteristics RDS(ON) 1.45 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP2762 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC conv

AP2764AI-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9AG RoHS CompliantSDescriptionAP2764A series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applicat

AP2761I-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.3 Simple Drive Requirement ID 6AG RoHS CompliantSDescriptionAP2761 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applicatio

AP2764I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 680VD Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9AGSDescriptionAP2764 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications.TO-220CFM type p

AP2762S-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP2762 series are specially designed as main switching devices forGDuniversal 90~265VAC off-line AC/DC

AP2764AI-A-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9AG RoHS Compliant & Halogen-FreeSDescriptionAP2764A series are from Advanced Power innova

AP2761R-APb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS CompliantSDescriptionAP2761 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications

AP2764AP-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9AG RoHS Compliant & Halogen-FreeSDescriptionAP2764A series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC con

AP2764AI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9AG RoHS CompliantSDescriptionAP2764A series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applicatio

AP2765I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8AG RoHS Compliant & Halogen-FreeSDescriptionAP2765 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC conv

AP2762I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristics RDS(ON) 1.4 Simple Drive Requirement ID 7AG RoHS CompliantSDescriptionAP2762 series are specially designed as main switching devices forGDuniversal 90~265VAC off-line AC/DC converter appl

AP2761S-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS Compliant & Halogen-FreeSDescriptionAP2761S is specially designed as main switching devices for universal90~265VAC off-line AC/DC converter appl

AP2761S-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS Compliant & Halogen-FreeSDescriptionAP2761 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

AP2761I-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.3 Simple Drive Requirement ID 6AG RoHS CompliantSDescriptionAP2761 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applicatio

AP2764AP-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 9AGSDescriptionAP2764A series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications.GTO-220(P)

GreenProductSP2702aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.513 @ VGS=10VSuface Mount Package.75V 1.6A614 @ VGS=4.5VESD Protected.5 4D2 G 26 3D2 S 2PIN1D1 7 2 G 18 1D1 S 1PDFN 5x6AB

P2703BAGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 27m @VGS = 10V 7ATSOP- 06ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C7IDContinuous Drain Current1TA = 70 C4.5AIDM35Pulsed Drain Current2IASAvalanche Current 17EA

P2710ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID32m @VGS = 10V100V 34ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C34IDContinuous Drain Current1TC = 100 C22AIDM100Pulsed Drain Curre

160A80VKNX2708AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =4.0m@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gate2 D

WM03P27M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -2.7A DS DR

isc N-Channel MOSFET Transistor FDP2710FEATURESWith TO-220 packagingDrain Source Voltage-: V 250VDSSStatic drain-source on-resistance:RDS(on) 42.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

iscN-Channel MOSFET Transistor IRFP27N60KFEATURESLow drain-source on-resistance:RDS(ON) =0.22 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL