TK31V60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31V60WTK31V60WTK31V60WTK31V60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.078 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

TK31A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31A60WTK31A60WTK31A60WTK31A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

TK31N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK31N60XTK31N60XTK31N60XTK31N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

TK31V60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK31V60W5TK31V60W5TK31V60W5TK31V60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 135 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.087 (typ.)(3) Easy to control Gate switc

TK31J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK31J60W5TK31J60W5TK31J60W5TK31J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 135 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.082 (typ.) by using Super Junction Stru

TK31N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK31N60W5TK31N60W5TK31N60W5TK31N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 135 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.082 (typ.) by used to Super Junction St

TK31V60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK31V60XTK31V60XTK31V60XTK31V60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.078 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

TK31E60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31E60WTK31E60WTK31E60WTK31E60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

TK31E60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK31E60XTK31E60XTK31E60XTK31E60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

TK31N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31N60WTK31N60WTK31N60WTK31N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

TK31J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31J60WTK31J60WTK31J60WTK31J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

NTK3142PSmall Signal MOSFET-20 V, -280 mA, P-Channel with ESDProtection, SOT-723Features Enables High Density PCB Manufacturinghttp://onsemi.com 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89 Low Voltage Drive Makes this Device Ideal for Portable EquipmentV(BR)DSS RDS(on) TYP ID Max Low Threshold Levels, 1.8 V RDS(on) Rating2.7 W @ -4.5 V-280 mA

NTK3142PSmall Signal MOSFET-20 V, -280 mA, P-Channel with ESDProtection, SOT-723Features Enables High Density PCB Manufacturinghttp://onsemi.com 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89 Low Voltage Drive Makes this Device Ideal for Portable EquipmentV(BR)DSS RDS(on) TYP ID Max Low Threshold Levels, 1.8 V RDS(on) Rating2.7 W @ -4.5 V-280 mA

NTK3139PPower MOSFET-20 V, -780 mA, Single P-Channel withESD Protection, SOT-723Featureshttp://onsemi.com P-channel Switch with Low RDS(on) 44% Smaller Footprint and 38% Thinner than SC-89 V(BR)DSS RDS(on) TYP ID Max Low Threshold Levels Allowing 1.5 V RDS(on) Rating 0.38 W @ -4.5 V -780 mA Operated at Low Logic Level Gate Drive0.52 W @ -2.5 V -660 mA-20 V

NTK3134NPower MOSFET20 V, 890 mA, Single N-Channel withESD Protection, SOT-723Featureswww.onsemi.com N-Channel Switch with Low RDS(on)V(BR)DSS RDS(on) TYP ID Max 44% Smaller Footprint and 38% Thinner than SC890.20 W @ 4.5 V 890 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive 0.26 W @ 2.5 V 790 mA20 V These Dev

NTK3139PMOSFET Power, Single,P-Channel with ESDProtection, SOT-723-20 V, -780 mAwww.onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID Max P-channel Switch with Low RDS(on)0.38 W @ -4.5 V -780 mA 44% Smaller Footprint and 38% Thinner than SC-890.52 W @ -2.5 V -660 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating-20 V0.70 W @ -1.8 V -100 mA Operated at

NTK3134NPower MOSFET20 V, 890 mA, Single N-Channel withESD Protection, SOT-723Featureshttp://onsemi.com N channel Switch with Low RDS(on)V(BR)DSS RDS(on) TYP ID Max 44% Smaller Footprint and 38% Thinner than SC890.20 W @ 4.5 V 890 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive 0.26 W @ 2.5 V 790 mA20 V These

SEMICONDUCTORFTK3139KTECHNICAL DATASOT-723P-Channel MOSFET ID V(BR)DSS RDS(on)MAX 520m@-4.5V 1. GATE 700m@-2.5V -20V-0.66A 2. SOURCE 950m@-1.8V 3. DRAIN FEATURE APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing, Logic Switching P-Channel Switch with Low RDS(on) Battery Management for Ultra

SEMICONDUCTORFTK3134KTECHNICAL DATAN-Channel MOSFET SOT-723ID V(BR)DSS RDS(on)MAX 380m@ 4.5V1. GATE 20V 450m@ 2.5V 0.75A2. SOURCE 800m@1.8V 3. DRAIN FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low R(on) DS Battery Management for Ultra Small Portabl

SEMICONDUCTORFTK3134KDTECHNICAL DATADual N-Channel MOSFETSOT-363ID V(BR)DSS RDS(on)MAX 380m@ 4.5V0.75A450m@ 2.5V 20V800m@1.8V FEATUREAPPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Electronics

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK31A60W, ITK31A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.073 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=1.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regul

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK31E60WITK31E60WFEATURESLow drain-source on-resistance:RDS(on) 0.088.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=1.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK31N60WFEATURESWith TO-247 packagingEasy to useHigh speed switchingVery high commutation ruggedness100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM