TK31 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK31V60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK31V60W TK31V60W TK31V60W TK31V60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.078 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

TK31A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK31A60W TK31A60W TK31A60W TK31A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

TK31N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK31N60X TK31N60X TK31N60X TK31N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

TK31V60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK31V60W5 TK31V60W5 TK31V60W5 TK31V60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 135 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.087 (typ.) (3) Easy to control Gate switc

TK31J60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK31J60W5 TK31J60W5 TK31J60W5 TK31J60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 135 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.082 (typ.) by using Super Junction Stru

TK31N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK31N60W5 TK31N60W5 TK31N60W5 TK31N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 135 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.082 (typ.) by used to Super Junction St

TK31V60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK31V60X TK31V60X TK31V60X TK31V60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.078 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

TK31E60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK31E60W TK31E60W TK31E60W TK31E60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

TK31E60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK31E60X TK31E60X TK31E60X TK31E60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

TK31N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK31N60W TK31N60W TK31N60W TK31N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

TK31J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK31J60W TK31J60W TK31J60W TK31J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

NTK3142P Small Signal MOSFET -20 V, -280 mA, P-Channel with ESD Protection, SOT-723 Features Enables High Density PCB Manufacturing http //onsemi.com 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89 Low Voltage Drive Makes this Device Ideal for Portable Equipment V(BR)DSS RDS(on) TYP ID Max Low Threshold Levels, 1.8 V RDS(on) Rating 2.7 W @ -4.5 V -280 mA

NTK3142P Small Signal MOSFET -20 V, -280 mA, P-Channel with ESD Protection, SOT-723 Features Enables High Density PCB Manufacturing http //onsemi.com 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89 Low Voltage Drive Makes this Device Ideal for Portable Equipment V(BR)DSS RDS(on) TYP ID Max Low Threshold Levels, 1.8 V RDS(on) Rating 2.7 W @ -4.5 V -280 mA

NTK3134N Power MOSFET 20 V, 890 mA, Single N-Channel with ESD Protection, SOT-723 Features www.onsemi.com N-Channel Switch with Low RDS(on) V(BR)DSS RDS(on) TYP ID Max 44% Smaller Footprint and 38% Thinner than SC89 0.20 W @ 4.5 V 890 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive 0.26 W @ 2.5 V 790 mA 20 V These Dev

NTK3139P MOSFET Power, Single, P-Channel with ESD Protection, SOT-723 -20 V, -780 mA www.onsemi.com Features V(BR)DSS RDS(on) TYP ID Max P-channel Switch with Low RDS(on) 0.38 W @ -4.5 V -780 mA 44% Smaller Footprint and 38% Thinner than SC-89 0.52 W @ -2.5 V -660 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating -20 V 0.70 W @ -1.8 V -100 mA Operated at

NTK3134N Power MOSFET 20 V, 890 mA, Single N-Channel with ESD Protection, SOT-723 Features http //onsemi.com N channel Switch with Low RDS(on) V(BR)DSS RDS(on) TYP ID Max 44% Smaller Footprint and 38% Thinner than SC89 0.20 W @ 4.5 V 890 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive 0.26 W @ 2.5 V 790 mA 20 V These

SEMICONDUCTOR FTK3139K TECHNICAL DATA SOT-723 P-Channel MOSFET ID V(BR)DSS RDS(on) MAX 520m @-4.5V 1. GATE 700m @-2.5V -20V -0.66A 2. SOURCE 950m @-1.8V 3. DRAIN FEATURE APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing, Logic Switching P-Channel Switch with Low RDS (on) Battery Management for Ultra

SEMICONDUCTOR FTK3134K TECHNICAL DATA N-Channel MOSFET SOT-723 ID V(BR)DSS RDS(on)MAX 380m @ 4.5V 1. GATE 20V 450m @ 2.5V 0.75A 2. SOURCE 800m @1.8V 3. DRAIN FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low R(on) DS Battery Management for Ultra Small Portabl

SEMICONDUCTOR FTK3134KD TECHNICAL DATA Dual N-Channel MOSFET SOT-363 ID V(BR)DSS RDS(on)MAX 380m @ 4.5V 0.75A 450m @ 2.5V 20V 800m @1.8V FEATURE APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Electronics

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK31A60W, ITK31A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.073 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=1.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regul

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK31E60W ITK31E60W FEATURES Low drain-source on-resistance RDS(on) 0.088 . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=1.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK31N60W FEATURES With TO-247 packaging Easy to use High speed switching Very high commutation ruggedness 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM