Биполярный транзистор UN221K - описание производителя. Основные параметры. Даташиты.
Наименование производителя: UN221K
Маркировка: 8P
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 4.7 kOhm
Соотношение сопротивлений R1/R2 = 2.1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: SOT23 SC59
UN221K Datasheet (PDF)
mun2211t.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN2211T1/DBias Resistor TransistorMUN2211T1NPN Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a singl
nsvmun2212t1g.pdf
MUN2211T1, SMUN2211T1,NSVMUN2211T1 SeriesBias Resistor TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias network
nsvmmun2217lt1g.pdf
MMUN2217L,NSVMMUN2217LDigital Transistors (BRT)R1 = 4.7 kW, R2 = 10 kWNPN Transistors with Monolithic Biashttp://onsemi.comResistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The Bias ResistorCOLLECTORTransistor (BRT) contains a single transistor with a monolithic bias (OUTPU
mmun2211lt1-d.pdf
MMUN2211LT1G SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a series
mun2211t1.pdf
MUN2211T1 SeriesPreferred DevicesBias Resistor TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two re
mmun2211lt1g mmun2211lt3g mmun2212lt1g mmun2213lt1g mmun2214lt1g mmun2215lt1g mmun2216lt1g mmun2230lt1g mmun2231lt1g mmun2232lt1g mmun2233lt1g mmun2234lt1g.pdf
MMUN2211LT1G Series,SMMUN2211LT1G Series,NSVMMUN2232LT1GBias Resistor TransistorNPN Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The BRT (Bias Resistor COLLECTORR1 (OUTPUT)Transistor) contains a single transistor
mun2211t1g mun2212t1g mun2213t1g mun2214t1g mun2215t1g mun2216t1g mun2230t1g mun2231t1g mun2232t1g mun2233t1g mun2234t1g mun2236t1g mun2237t1g mun2240t1g mun2241t1g.pdf
MUN2211T1, SMUN2211T1,NSVMUN2211T1 SeriesBias Resistor TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias network
mun2214 mmun2214l mun5214 dtc114ye dtc114ym3 nsbc114yf3.pdf
MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT
mmun2217l mmun2217lt1g.pdf
MMUN2217L,NSVMMUN2217LDigital Transistors (BRT)R1 = 4.7 kW, R2 = 10 kWNPN Transistors with Monolithic Biashttp://onsemi.comResistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The Bias ResistorCOLLECTORTransistor (BRT) contains a single transistor with a monolithic bias (OUTPU
nsvmmun2212lt1g.pdf
MUN2212, MMUN2212L,MUN5212, DTC124EE,DTC124EM3, NSBC124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
mun2211jt1g.pdf
MUN2211, MMUN2211L,MUN5211, DTC114EE,DTC114EM3, NSBC114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
unr221x un221x series.pdf
Transistors with built-in ResistorUNR221x Series (UN221x Series)Silicon NPN epitaxial planar transistorUnit: mm0.40+0.100.05For digital circuits0.16+0.100.063 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts.1 2 Mini type package allowing easy automatic insertion through tape(0.95) (0.95)packing
un2210q un2210r un2210s un2211 un2212 un2213 un2214 un2215q un2215r un2215s un2216q un2216r un2216s un2217q un2217r un2217s.pdf
Transistors with built-in ResistorUN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/221D/221E/221F/221K/221L/221M/221N/221T/221V/221ZSilicon NPN epitaxial planer transistorUnit: mmFor digital circuits +0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15Features Costs can be reduced through downsizing of the equipment and1reduction of the number of parts.3 Mini ty
mmun2211.pdf
MMUN2211 SeriesCOLLECTOR3Bias Resistor Transistor3BASE R1NPN Silicon1R212P b Lead(Pb)-Free2EMITTERSOT-23MAXIMUM RATINGSRating SymbolValue Unit50 VdcCollector-Emitter Voltage VCEOCollector-Base Voltage 50 VdcVCBOCollector Current-Continuous I 100 mAdcCTHERMAL CHARACTERISTICSCharacteristics Symbol Value UnitTotal Device Dissipation FR-5 Board (1
lmun2211lt lmun2212lt lmun2213lt lmun2214lt lmun2215lt lmun2216lt lmun2230lt lmun2231lt lmun2232lt lmun2233lt lmun2234lt lmun2235lt lmun2236lt lmun2237lt lmun2238lt lmun2240lt lmun2241lt.pdf
LESHAN RADIO COMPANY, LTD.Bas Resstor TransstorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkLMUN2211LT1G SeriesS-LMUN2211LT1G SeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network3
kmun2214.pdf
ssSMD Type TranssiisttorrsSMD Transs iis ttoCsSMD Type Tran IorrSMDType Tra n ICSMD TypeSMD TypeSMD Type oTypeProduct specificationKMUN221 4SOT-23Unit: mm Features+0.12.9-0.1+0.10.4-0.1 Simplifies Circuit Design3 Reduces Board Space Reduces Component Count1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1PIN 3COLLECTORPIN 1R1 (
mun2211-34.pdf
SMD Type TransistorsNPN TransistorsMUN2211 ~ MUN2234 SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1PIN3CollectorPIN1R1(Output)base1.Base(Input)R22.EmitterPIN23.collectorEmitter(Ground) Absolute Maximum
mmun2211lt1 mmun2212lt1 mmun2213lt1 mmun2214lt1 mmun2215lt1 mmun2216lt1 mmun2230lt1 mmun2231lt1 mmun2232lt1 mmun2233lt1 mmun2234lt1.pdf
Lead FreeRoHS CompliantMEI
mmun2211 mmun2241.pdf
NPN Silicon Epitaxial Planar Transistorfor switching and interface circuit and drive circuit applications Resistor ValuesType R1 (K) R2 (K) MMUN2211 10 10 1.Base 2.Emitter 3.Collector MMUN2212 22 22 SOT-23 Plastic PackageMMUN2213 47 47 MMUN2214 10 47 Collector MMUN2215 10 (Output) MMUN2216 4.7 R1 Base (Input) MMUN2230 1 1 R2MMUN2231 2.2 2.2 Emi
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